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High Thermal Conductivity Aluminum Nitride-Based HOM Absorbers

Award Information
Agency: Department of Energy
Branch: N/A
Contract: DE-FG02-08ER85180
Agency Tracking Number: 85447
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: 36 a
Solicitation Number: DE-PS02-07ER07-36
Timeline
Solicitation Year: 2008
Award Year: 2008
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
19501 144th Ave NE Suite F-500
Woodinville, WA 98072
United States
DUNS: 015577190
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Ender Savrun
 Dr.
 (425) 485-7272
 ender.savrun@siennatech.com
Business Contact
 Karen Valdastri
Title: Ms.
Phone: (425) 485-7272
Email: karen.valdastri@siennatech.com
Research Institution
N/A
Abstract

A family of aluminum-nitride/silicon-carbide (AlN/SiC) composite lossy dielectrics are being developed to replace the toxic beryllia/silicon-carbide (BeO/SiC) composite lossy dielectrics as high order mode (HOM) absorbers in superconductor radio frequency (SRF) cavities in linear accelerators and in microwave tubes. Even though the dielectric properties of AlN/SiC composites match those of BeO/SiC composites, the low thermal conductivity of AlN/SiC composites has prevented their use in high power applications. This low thermal conductivity is caused by the formation of a solid solution between AlN and SiC at processing temperatures. This project will develop an approach to prevent the formation of this solid solution, which will result in a high thermal conductivity (=130 W/m-K), lossy AlN/SiC composite with repeatable thermal and electrical properties. In Phase I, the microstructures of the AlN/SiC composites will be characterized using advanced electron microscopy and electron probe microanalysis (EPMA). Prototype AlN/SiC composite HOM absorbers will be evaluated in the cavity by measuring the resonant frequency and cavity quality (Q) factor over the frequency of interest in the S-band. Commercial Applications and other Benefits as described by the awardee: An AlN-based HOM absorber with high thermal conductivity should be a viable product for use in linear particle accelerators, high power microwave tubes, space and satellite communications, and wireless communications.

* Information listed above is at the time of submission. *

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