You are here
Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs
Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00039-08-C-0068
Agency Tracking Number: N072-147-0525
Amount:
$99,885.00
Phase:
Phase I
Program:
SBIR
Solicitation Topic Code:
N07-147
Solicitation Number:
2007.2
Timeline
Solicitation Year:
2007
Award Year:
2007
Award Start Date (Proposal Award Date):
2007-11-07
Award End Date (Contract End Date):
2008-09-07
Small Business Information
1195 Atlas Road
Columbia, SC
29209
United States
DUNS:
135907686
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Nezih Pala
Title: Research Scientist
Phone: (803) 647-9757
Email: pala@s-et.com
Title: Research Scientist
Phone: (803) 647-9757
Email: pala@s-et.com
Business Contact
Name: Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
N/A
Abstract
We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Unlike RF switches based on regular semiconductor devices, key characteristics of properly designed III-Nitride HFET - based RF switches will actually improve at cryogenic temperatures. These include insertion loss, maximum switching powers, switching times and others.
* Information listed above is at the time of submission. *