You are here
AlInGaN-Based Deep Ultraviolet Laser Diode Over Bulk AlN Substrates
Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-04-C-R040
Agency Tracking Number: 02SB2-0307
Amount:
$2,949,830.00
Phase:
Phase II
Program:
SBIR
Solicitation Topic Code:
SB022-043
Solicitation Number:
2002.2
Timeline
Solicitation Year:
2002
Award Year:
2004
Award Start Date (Proposal Award Date):
2003-12-17
Award End Date (Contract End Date):
2007-12-31
Small Business Information
1195 Atlas Road
Columbia, SC
29209
United States
DUNS:
135907686
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Business Contact
Name: Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
N/A
Abstract
To develop technology for manufacturing of deep ultraviolet (DUV) semiconductor Laser Diode (LDs) emitting in the spectral range of 250nm.
* Information listed above is at the time of submission. *
