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High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over Bulk AlN Substrate Subtopic BMDO/02-214B
Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: F33615-02-M-5424
Agency Tracking Number: 02-1136
Amount:
$69,838.00
Phase:
Phase I
Program:
SBIR
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Timeline
Solicitation Year:
N/A
Award Year:
2002
Award Start Date (Proposal Award Date):
N/A
Award End Date (Contract End Date):
N/A
Small Business Information
21 Cavalier Way
Latham, NY
12110
United States
DUNS:
135907686
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Xuhong Hu
Title: Research Scientist
Phone: (803) 647-9757
Email: hu@s-et.com
Title: Research Scientist
Phone: (803) 647-9757
Email: hu@s-et.com
Business Contact
Name: Remis Gaska
Title: President and CEO
Phone: (518) 783-8936
Email: gaska@s-et.com
Title: President and CEO
Phone: (518) 783-8936
Email: gaska@s-et.com
Research Institution
N/A
Abstract
We propose to evaluate the feasibility of single crystal bulk AlN substrates for the development of high-power, high-frequency III-Nitride Double Heterostructure Field Effect Transistors (DHFETs) as building blocks for microwave (X-band and higher)amplifiers. Higher reliability and increased life-time of high power transistors. Potential applications include T/R modules for phased array radars, base stations for next generation wireless communications
* Information listed above is at the time of submission. *
