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Sensor Electronic Technology, Inc.
UEI: ZLAMG4KBKN15
# of Employees: 82
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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GaN High-Power Low-Loss C3-varactor RF switch MMIC
Amount: $79,974.00WWe propose to develop novel low-loss high-power fully planar GaN C3 (Capacitively-Coupled-Contact) varactor RF switch MMIC with switching time well below 300 ns. The use of GaN material system offers ...
SBIRPhase I2014Department of Defense Navy -
Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications
Amount: $149,959.00ABSTRACT: We propose to develop novel high-temperature robust control ICs compatible with power SiC device using on insulated gate III-Nitride transistors MISHFETs - over SiC native nitride substrat ...
SBIRPhase I2013Department of Defense Air Force -
AlInN/GaN HFET over Free-Standing bulk GaN substrates
Amount: $999,859.00This proposed research for Phase II consideration involves the growth of AlInN/GaN heterostructure field effect transistors (HFET) on bulk GaN substrates. By combining a homoepitaxial substrate for t ...
STTRPhase II2012Department of Defense Missile Defense Agency -
Normally-OFF AlInN/GaN MISHFET with composite channel
Amount: $79,938.00We propose to develop new key building blocks for next generation power electronics based on III-Nitride semiconductor technology. High-voltage, low-loss, normally-off III-Nitride insulated gate hete ...
SBIRPhase I2012Department of Defense Navy -
Ultraviolet Communication for Medical Applications
Amount: $99,950.00Deep ultraviolet LEDs will be developed and tested for customized application. Medical Communication system will be studied and prototyped with use of Solid State Components. Optical, thermal, electri ...
SBIRPhase I2012Department of Defense Army -
AlInN/GaN HFET over Free-Standing bulk GaN substrates
Amount: $99,963.00SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with ...
STTRPhase I2010Department of Defense Missile Defense Agency -
AlInN/GaN heterostructures for X-band RF power amplification
Amount: $749,823.00SETI proposed to develop the growth technology for lattice matched AlInN/GaN heterostructures and demonstrate the potential of this technology for high power, high frequency HFET RF power amplifiers. ...
SBIRPhase II2010Department of Defense Missile Defense Agency -
SBIR Phase I: Development of UV-B SLED and LD
Amount: $149,951.00This Small Business Innovation Research Phase I project will develop innovative edge emitting superluminescent light emitting diodes (SLED) and laser diodes (LD) with emission in the UV-B spectral ran ...
SBIRPhase I2010National Science Foundation -
High-Temperature Low-Loss III-Nitride MOSHFET RF Limiter
Amount: $69,199.00We propose to develop a compact solid-state RF power limiter using III-Nitride technology fully compatible with that of other III-Nitride RF components (power amplifiers, RF switches etc.) The propose ...
SBIRPhase I2010Department of Defense Navy -
SBIR Phase II: Deep UV LED with High Quality p-AlInGaN Layers by Digital Doping Control
Amount: $534,765.00This Small Business Innovation Research Phase II project will develop and commercialize next-generation high-power deep ultraviolet light emitting diodes (DUV LEDs) with high quality p-type doped AlIn ...
SBIRPhase II2010National Science Foundation