A multi-channel short range bio-medical telemetry system is described which uses infra-red transmission and a very efficient and inexpensive modulation and demodulation system, well suited for computer data processing. the system overcomes the limited frequency allocation and interference problems… More

For a multipoint tactile array system, two actuator designs are proposed: a magnetic and a pvdf design. the magnetic design is best suited for pin-to-pin spacing of 3 mm and larger. pin travel amplitude of 2 mm (and longer if needed)can be readily implemented, and typical frequency response is… More

The applicant organization has discovered and experimentally observed that an electroacoustical compensation (elac) circuit counteracts the occlusion effect experienced by hearing aid weare s of unvented hearing aids. unvented hearing aids with the elac circuit show promise for a significant… More

We propose to develop solar-blind AlInGaN-based optoelectronic field effect transistor arrays and a prototype solar-blind imaging system by combining our novel Strain/Energy Band Engineering (SEBE) technology, selective area growth technique, and devicepassivation for the leakage current… More

We propose a new way to reach a dramatic speed-up of floating gate memories by using quantum-mechanical tunneling through specially shaped (

We propose to develop and commercialize GaN-based blue and near UV light integrated optoelectronics technology for modulation, switching, and distribution of blue and near-UV light. This technology will include integrated optical waveguides, splitters,and electrooptical modulators integrated with… More

Our technical approach is based on a uniquely large (close to 3 eV for GaN) energy band shift in III-Nitride based p-n junctions. We propose to enhance electron mobility in the n-doped MESFET channel by localizing electrons at the surface using a lightlyp-doped GaN buffer layer (patent pending).… More

We propose to develop dual infra-red UV solar-blind AlInGaN-based photodetectors by combining our novel Strain/Energy Band Engineering (SEBE) technology, selective area growth technique, and device passivation for the leakage current reduction with theMultiple Quantum Well design for using… More

We will develop and demonstrate high power GaN HDMESFETs grown over conducting 6H-SiC substrates for effective thermal management. The SiC substrate will be separated from the device channel by insulating GaN buffer layer thick enough to have thecapacitance between the substrate and the device… More

We propose to develop a new approach to recessed gate/active passivation AlGaN/GaN FET technology for the development of high-power AlN/AlGaN/GaN recessed gate Heterostructure Field Effect Transistors (HFET) for microwave amplifiers. We will use ourproprietary technology of the textured AlN thin… More

We will develop commercially viable AlN/GaN/InN-based epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation T/R modules. This technology is based on the development of a reproducibleMOCVD epitaxial layer growth technology using… More

We will develop commercially viable AlN/GaN/InN-based epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation T/R modules. The technology will be based on the development of a reproducibleMOCVD epitaxial layer growth technology… More

"We will develop commercially viable quaternary AlInGaN-based epitaxial wafer technology on semi-insulating 6H-SiC for manufacturing of reliable high microwave power transistors and amplifiers for new generation of radars and wireless communication systems.We will use our proprietary growth… More

We propose to evaluate the feasibility of single crystal bulk AlN substrates for the development of high-power, high-frequency III-Nitride Double Heterostructure Field Effect Transistors (DHFETs) as building blocks for microwave (X-band and higher)amplifiers. Higher reliability and increased… More

We propose to develop technology for manufacturing deep ultraviolet (DUV) semiconductor Laser Diode (LDs) emitting in the spectral range of 250 nm. Blue and near UV (wavelength > 370 nm) light emitters are based on GaN/InGaN material system. In Phase I, wewill demonstrate LD structures with… More

We propose to develop commercially viable material growth technology for manufacturing of AlInGaN-based Double Heterostructure Field Effect Transistor (DHFET) epitaxial wafers on single crystal bulk AlN substrates. The epitaxial wafers will be optimizedfor the development of high-power, high… More

We will develop commercially viable quaternary AlInGaN-based epitaxial wafer technology on semi-insulating 6H-SiC for manufacturing of reliable high microwave power, high operation temperature (300 oC and higher) transistors and amplifiers for newgeneration of T/R modules. We will use our… More

We propose to develop a new majority carrier device, Induced Base Transistor (IBT), which will use a very high density of the two-dimensional electron gas in GaN in order to dramatically reduce the base spreading resistance. We will use selective areagrowth technique for the deposition of emitter.… More

We propose to a new approach AlGaN/GaN Heterostructure Field Effect Transistors (HFET) technology for reliable, stable, high-power microwave amplifiers using novel recessed gate/active passivation design. Under certain process conditions of BCl3 RIEetching for optimized InGaN films, the In etch… More

We will develop and scale-up a hybrid AlGaN/GaN Heterostructure Field Effect Transistor (HFET) wafer growth technology, which combines conventional MOCVD growth with our novel Pulsed Atomic Layer Epitaxy (PALE) deposition technique. In PALE deposition ofAlGaN-based heterostructures the metalorganic… More

Increasing the GaN and AlGaN thickness is crucial for improved material quality and, thus, increased microwave output and enhanced reliability of high-power devices. We will use our proprietary growth technology and unique buffer layer design to depositthick GaN and AlGaN templates for quaternary… More

The goal of this program is to develop commercially viable epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation of Transmit/Receive modules using trap engineering technology. The newgeneration of III-Nitride HFETs will be less… More

We propose to develop a new technology to AlGaN/GaN Heterostructure Field Effect Transistors (HFET) using benzocyclobutene (BCB) surface passivation process to improve microwave power and power added efficiency for the development of reliable and stablehigh-power AlGaN/GaN HFET microwave amplifiers.… More

Terahertz plasma wave detectors and emitters utilizing the high-density 2-D electrons in submicron AlGaInN/GaN-based Quantum Well Heterostructure Field Effect Transistors (QW-HFETs) with high sensitivity levels for the sensing of terahertz (THz) frequencyelectromagnetic radiation are proposed The… More

To develop technology for manufacturing of deep ultraviolet (DUV) semiconductor Laser Diode (LDs) emitting in the spectral range of 250nm.

Terahertz plasma wave detectors and emitters utilizing the high-density 2-D electrons in submicron AlGaInN/GaN-based Quantum Well Heterostructure Field Effect Transistors (QW-HFETs)with high-sensitivity levels for the sensing of terahertz (THz) frequency electromagnetic radiation are proposed and… More

The output power and power added efficiency are the key performance parameters of modern transmitter/receiver (T/R) modules. The optimization of these parameters depends mostly on the RF characteristics of the active elements used in the T/R module output stages. GaAs FETs and HFETs that are… More

SET will develop commercially viable large area multi-epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation of Transmit/Receive modules.

Premature breakdown is a key obstacle in developing AlGaN-based avalanche photo diodes (APD) for ultraviolet (UV) light detection. Novel materials growth techniques, such as Hydride Vapor Phase Epitaxy (HVPE) allows for reduction of dislocation density only to approximately 10^7 cm-2. In order to… More

We propose to develop power limiter based on Schottky diodes over AlGaN/GaN structure. The limiters would have the capability to integrate with AlGaN/GaN transistors, which is a good candidate for next-generation power amplifiers. The microwave noise behavior of GaN-based transistors is also similar… More

We propose to develop submicron gate large periphery AllnGaN-Gan based metal-oxide semiconductor heterojunction field-effect transistors (MOSHFET) as a building block for high-power (>20W), high frequency (x-band) amplifiers.

We propose a new approach for fabrication of reliable, high breakdown voltage InGaN-channel transistors for next generation radars and communications systems. Double recessed gate design enabled to increase breakdown voltage, alleviate non-ideal effects, and suppressing current instabilities and… More

Sensor Electronic Technology, Inc. proposes a radically different approach for pushing the GaN HEMT performance above the 200 GHz range. In this approach, called Drain Gate Recess, the shape of the recessed gate is such that the gate metal is CLOSER to the channel near the drain edge of the… More

Sensor Electronic Technology, Inc. proposes a radically different approach for pushing the GaN HEMT performance above the 200 GHz range. In this approach, called Drain Gate Recess, the shape of the recessed gate is such that the gate metal is CLOSER to the channel near the drain edge of the… More

This Small Business Innovation Research Phase I research project aims to develop high power UV LED based lamps for use in water/air/food sterilization/purification, bio-aerosol detection, and laboratory measurement systems. There are currently no portable, rugged, long-lifetime, non-toxic sources of… More

We propose to develop GaN HFET based sources with enhanced RF operation characteristics at millimeter wave frequencies and beyond by utilizing combination of our novel plasma wave approach and newly observed electron-transit-time effects. Electron-transit-time effects in the saturation regime of… More

New structure GaN-based field effect transistors (FETs) are proposed to solve the problem. A composition graded buffer, aiming at eliminating dislocations arising from hetero-epitaxy interface and suppressing channel electrons spillover under negative gate bias, a Si-delta-doped GaN layer just below… More

Sensor Electronic Technology Inc. proposes to develop a new epitaxial layer design with ternary (InGaN) and quaternary (AlInGaN) stop etch layers for double recess device fabrication. We already demonstrated significant improvement in the RF performance of AlGaN/InGaN/AlGaN/GaN-based HFETs with the… More

This Small Business Innovation Research (SBIR) Phase II project will result in solid-state high power UV LED based lamps for use in water/air/food sterilization/purification, bio-aerosol detection, bio-medical instrumentation, and laboratory measurement systems. Currently there are no portable,… More

Sensor Electronic Technology, Inc. (SET) proposes to develop ultraviolet detectors for focal plane arrays based on wide-bandgap semiconductor materials. Direct gap III?N AlInGaN materials are the only materials capable of combining a high sensitivity for detecting UV radiation with a sharp cutoff… More

GaN-based electronic and optoelectronic devices have demonstrated superior properties for applications involving visible and ultraviolet light emitting diodes (LEDs), laser diodes, and high-power electronic devices. Despite the significant improvement in the performance of these devices, they still… More

This Small Business Innovation Research (SBIR) Phase I project will develop bulk AlGaN substrates for advanced III-Nitride based semiconductor devices. The substrates will be grown by a modified hydride vapor phase epitaxy (HVPE) technique to produce thick, low dislocation density, lattice matched… More

This Small Business Innovation Research (SBIR) Phase I project proposes to develop ultraviolet light emitting diode (LED) based point-of-use water and wastewater sterilization reactors. UV radiation has been shown to be one of the most effective methods for purification/sterilization of… More

We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Unlike RF switches based on regular semiconductor devices, key characteristics of properly… More

Sensor Electronic Technology, Inc. proposes to use QD-like fluctuations of InGaN QW with controllable spatial distribution for high efficiency green LEDs. We will investigate both theoretically and experimentally the performance of green InGaN MQW structures with fluctuations of composition and… More

Ultra-dense integrated circuits with sub-10-nm features would provide enormous benefits for all information technologies, including computing, networking, and signal processing. However, it is widely accepted that a radical paradigm shift from purely CMOS technology to hybrid CMOS/nanodevice… More

This Small Business Innovation Research Phase I Project proposes to develop a new epitaxial growth process for production of long-lasting (lifetime > 20,000 hours), high-efficiency (wall-plug efficiency > 10%) deep ultraviolet light emitting diodes (DUV LEDs) based on III-Nitride materials. Due to… More

The proposal calls for development of novel type of RF switches for JTRS using patented III-Nitride insulated gate heterostructure field-effect transistors (MOSHFETs). III-Nitride MOSHFETs are excellent candidates for high-power RF stages of JTRS. They possess the highest power densities, highest… More

Two complementary approaches to develop next generation of large area, high-efficiency and high-power deep ultraviolet light emitting diodes (DUV LED) are being proposed. Firstly, due to the lack of adequate quality native substrates, DUV LEDs are made from heteroepitaxial AlGaN films grown on… More

This Small Business Innovation Research Project will develop an innovative approach for epitaxial deposition of high quality thick (Al)(In)(Ga)N layers with low dislocation density. Accomplishment of the proposed effort will provide technology for next generation UV LED structures, which currently… More

This Small Business Innovation Research (SBIR) Phase I project will develop innovative water disinfection unit based on solid state UV LED lamps for compact point-of-use and point-of-entry water purification reactors. Accomplishment of the proposed research will result in compact semiconductor LED… More

This Small Business Innovation Research Project will develop next generation high power deep ultraviolet light emitting diodes with high quality p-type AlInGaN layers with digital doping control. Advancements in AlInGaN material system and device technology have resulted in commercially viable UV… More

We propose to develop a novel hybrid circuit approach combining CMOS and two terminal crosspoint nanodevices with a novel interface consisting of an array of pins with nanometer scale tips. Our CMOL approach will allow the fabrication of ultra-dense integrated circuits (up to 10^12 active devices… More

SETI proposes to develop GaN and Si based multicolor FIR/THz cameras with detector elements and readout, signal processing electronics integrated on a single chip. The active detector elements will be submicron gated channels with 2 dimensional electron gas (2DEG). The devices with gated 2DEG… More

We propose to develop and commercialize novel normally-off III-Nitride insulated gate heterostructure field effect transistor (MOSHFET) for power converters. Based on our experience in high power insulated gate III-N HFET development, we strongly believe that this device is the most promising for… More

Sensor Electronic Technology, Inc. will develop, prototype and start pilot production of new class of high power deep ultraviolet (DUV) light-emitting diodes (LED) using our proprietary and patented technology and novel technical approaches demonstrated during Phase I effort. Target performance… More

SETI proposes to develop and commercialize innovative technology for AlInN/GaN heterostructure growth and metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) fabrication for the high power X-band operation. Our technical approach is based on the proprietary and patented… More

We propose to develop and commercialize III-Nitride insulated gate MOSHFET-based power converters for radar T/R modules power supplies. Based on our experience in high power III-N MOSHFET development and figures of merit discussed below, we strongly believe that this device is the most promising for… More

We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Due to extremely high electron density in the 2D channel formed at the AlGaN/GaN interface,… More

SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with the incorporation of indium, we expect dramatic enhancement of these HFET in power density,… More

SETI proposed to develop the growth technology for lattice matched AlInN/GaN heterostructures and demonstrate the potential of this technology for high power, high frequency HFET RF power amplifiers. In Phase I, we successfully demonstrated MEMOCVDr growth of AlInN/GaN structures with Ga-free… More

This Small Business Innovation Research Phase I project will develop innovative edge emitting superluminescent light emitting diodes (SLED) and laser diodes (LD) with emission in the UV-B spectral range (280 nm to 320 nm). A variety of optical sensing applications that require high power density… More

We propose to develop a compact solid-state RF power limiter using III-Nitride technology fully compatible with that of other III-Nitride RF components (power amplifiers, RF switches etc.) The proposed limiter is based on the SET Inc. proprietary insulated gate device (MOSHFET) design and… More

This Small Business Innovation Research Phase II project will develop and commercialize next-generation high-power deep ultraviolet light emitting diodes (DUV LEDs) with high quality p-type doped AlInGaN layers via migration-enhanced metal-organic chemical vapor deposition (MEMOCVD). DUV LEDs… More

This SBIR Phase I project will establish a commercial water disinfection system based on the use of light emitting diodes that would be appropriate for use in residential settings. The Phase II effort will redesign the system so that the removal efficiency may be enhanced and the packaging of the… More

We propose developing, manufacturing, fielding and validating environmentally friendly, energy efficient revolutionary ultraviolet irradiation devices (UID) to improve nutritional value of greenhouse crops. UIDs will be based on a new technology to produce deep ultraviolet semiconductor Light… More

This proposed research for Phase II consideration involves the growth of AlInN/GaN heterostructure field effect transistors (HFET) on bulk GaN substrates. By combining a homoepitaxial substrate for the growth of the heterostructures with the lattice-matching ability of the AlInN alloy, it is… More

We propose to develop new key building blocks for next generation power electronics based on III-Nitride semiconductor technology. High-voltage, low-loss, normally-off III-Nitride insulated gate heterostructure field-effect transistor (MISHFET) is based on innovative and patent-pending… More

Deep ultraviolet LEDs will be developed and tested for customized application. Medical Communication system will be studied and prototyped with use of Solid State Components. Optical, thermal, electrical and data transfer characteristics will be investigated theoretically and experimentally