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Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems
Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: FA8650-04-C-5435
Agency Tracking Number: B2-0551
Amount:
$500,000.00
Phase:
Phase II
Program:
STTR
Solicitation Topic Code:
BMDO02T-00
Solicitation Number:
N/A
Timeline
Solicitation Year:
2002
Award Year:
2004
Award Start Date (Proposal Award Date):
2004-09-30
Award End Date (Contract End Date):
2006-09-30
Small Business Information
One Research Blvd., Suite 201B
Starkville, MS
39759
United States
DUNS:
622392111
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Igor Sankin
Title: Senior Device Engineer
Phone: (662) 324-7607
Email: Igor.Sankin@SemiSouth.com
Title: Senior Device Engineer
Phone: (662) 324-7607
Email: Igor.Sankin@SemiSouth.com
Business Contact
Name: Kelly Cutshall
Title: Treasurer
Phone: (662) 324-7607
Email: Kelly.Cutshall@SemiSouth.com
Title: Treasurer
Phone: (662) 324-7607
Email: Kelly.Cutshall@SemiSouth.com
Research Institution
Name: Mississippi State University
Contact: Robyn Remotigue
Address:
Phone: (662) 325-7397
Type: Nonprofit College or University
Contact: Robyn Remotigue
Address:
PO Box 6156 - Sponsored Prog, Mississippi State Un
Mississippi State, MS
39762
United States
Phone: (662) 325-7397
Type: Nonprofit College or University
Abstract
SiC Integrated Circuits (IC''s) offer the potential for operation over a wide temperature range (77 K to 800 K), and high-radiation environments. In this proposal, we outline a program to transfer and mature patented SiC epitaxy and device technology for use in SiC JFET IC''s from Mississippi State University to SemiSouth Laboratories. The result will be precise controlled epitaxy layers (doping and thickness) in SiC, with abrupt transitions between n-type channel and heavily doped p-type gate regions, as well as demonstration of JFET IC''s in SiC.
* Information listed above is at the time of submission. *
