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Self-aligned L-band SiC Power MESFET with Improved Current Stability for Ballistic Missile Defense Systems
Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: FA8650-04-M-5424
Agency Tracking Number: B041-039-1473
Amount:
$100,000.00
Phase:
Phase I
Program:
SBIR
Solicitation Topic Code:
MDA04-039
Solicitation Number:
2004.1
Timeline
Solicitation Year:
2004
Award Year:
2004
Award Start Date (Proposal Award Date):
2004-04-30
Award End Date (Contract End Date):
2004-10-30
Small Business Information
One Research Blvd., Suite 201B
Starkville, MS
39759
United States
DUNS:
622392111
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Igor Sankin
Title: Senior Device Engineer
Phone: (662) 324-7607
Email: igor.sankin@semisouth.com
Title: Senior Device Engineer
Phone: (662) 324-7607
Email: igor.sankin@semisouth.com
Business Contact
Name: Janna Casady
Title: SiC Device Program Manage
Phone: (662) 324-7607
Email: janna.casady@semisouth.com
Title: SiC Device Program Manage
Phone: (662) 324-7607
Email: janna.casady@semisouth.com
Research Institution
N/A
Abstract
In coordination with other ONR and MDA sponsored SiC MESFET development, SemiSouth proposes development of an improved, L or S-band designed SiC MESFET which focuses on a self-aligned process. This self-aligned process requires development of a high-uniformity gate recess etch and an improved, smoother surface silicide process. This work complements ongoing work involving a major prime contractor on SiC MESFET's for long-range radar systems, where SemiSouth is focused on developing highly uniform MESFET epitaxy layers, and SiC MESFET passivation schemes.
* Information listed above is at the time of submission. *