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Development of Silicon Carbide Thick Epitaxy with High Growth Rate and Near-Perfect Surface for Megawatt Switching Applications

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: FA8650-05-C-7209
Agency Tracking Number: D032-0490
Amount: $750,000.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: SB032-044
Solicitation Number: 2003.2
Timeline
Solicitation Year: 2003
Award Year: 2005
Award Start Date (Proposal Award Date): 2004-12-06
Award End Date (Contract End Date): 2007-04-05
Small Business Information
201 Research Blvd.
Starkville, MS 39759
United States
DUNS: 622392111
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Janna Casady
 SiC Device Program Manage
 (662) 324-7607
 janna.casady@semisouth.com
Business Contact
 Brenda Temple
Title: Senior Corporate Accounta
Phone: (662) 324-7607
Email: brenda.temple@semisouth.com
Research Institution
N/A
Abstract

A thick SiC epitaxy process was demonstrated by SemiSouth in Phase I, as the growth (or deposition) rate was boosted from 5 um/h to 20 um/h, and thickness uniformity was kept to 5% or below. In the Phase 2 effort, it is proposed that the processes be developed for production by re-designing and optimizing the reactor susceptor in a research reactor to minimize cost and risk. Specifically, the surface morphology will be improved to near perfect finish as a result of this process development, while maintaining a very high (15-30 um/h) growth rate needed for economical production and minimizing risk to production reactor systems. Once optimized, the process will be transferred to the production system and offered as a product, enabling a MegaWatt class of SiC devices to emerge in the marketplace.

* Information listed above is at the time of submission. *

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