You are here
SemiSouth Laboratories
UEI: N/A
# of Employees: 59
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
-
Optically Gated, Silicon Carbide (SiC) Semiconductors for Aircraft Electrical Actuator Motor Drives
Amount: $749,934.00SemiSouth Laboratories, Inc., a leading developer and manufacturer of silicon carbide (SiC) power semiconductor devices, OptiSwitch Technology Corporation, a leading developer and manufacturer of ligh ...
SBIRPhase II2010Department of Defense Air Force -
Optically Gated, Silicon Carbide (SiC) Semiconductors for Aircraft Electrical Actuator Motor Drives
Amount: $99,711.00SemiSouth Laboratories, Inc., a leading developer and manufacturer of silicon carbide (SiC) power semiconductor devices, and OptiSwitch Technology Corporation, a leading developer and manufacturer of ...
SBIRPhase I2009Department of Defense Air Force -
High Voltage High Frequency Switch
Amount: $69,771.00SemiSouth Laboratories, Inc. (SemiSouth), a leading developer and manufacturer of silicon carbide (SiC) power-electronics device technology, proposes the development of a low-cost hybrid switch based ...
SBIRPhase I2008Department of Defense Navy -
Scalable Solid-State Circuit Breaker (SSCB)
Amount: $99,935.00Solid-state circuit breakers have significant advantage over electromechanically relays due to the use of various types of solid-state transistors used to control the power flow. These transistors ar ...
SBIRPhase I2008Department of Defense Army -
An Innovative Silicon Carbide (SiC) 6-KV, 1-KA Gate Turn Off (GTO) Thyristor
Amount: $99,992.00A high-voltage, high-current, SiC power switch is required by the existing utility infrastructure and its need to interconnect renewable energy sources to the grid (such as wind and solar photovoltaic ...
SBIRPhase I2007Department of Energy -
Development of Silicon Carbide Thick Epitaxy with High Growth Rate and Near-Perfect Surface for Megawatt Switching Applications
Amount: $750,000.00A thick SiC epitaxy process was demonstrated by SemiSouth in Phase I, as the growth (or deposition) rate was boosted from 5 um/h to 20 um/h, and thickness uniformity was kept to 5% or below. In the P ...
SBIRPhase II2005Department of Defense Defense Advanced Research Projects Agency -
Development of Radiation Hard 4H-SiC Power Switches and Rectifiers for Circuit Applications In Harsh Environments
Amount: $749,988.00ABSTRACT: Several new high-power, long range radar systems are under development for near-term upgrades or fielding by MDA, Navy, and Marine Corps, which will use High Voltage GaAs or new WBG Semicon ...
STTRPhase II2005Department of Defense Missile Defense Agency -
Decentralized Nonlinear Controller Based SiC Parallel DC-DC Converter
Amount: $69,982.00This proposal is aimed at demonstrating the feasibility of a Decentralized Control based SiC Parallel DC-DC Converter Unit (DDCU) with targeted application for NASA's International Space Station Progr ...
SBIRPhase I2005National Aeronautics and Space Administration -
500?C SiC JFET Driver Circuits and Packaging
Amount: $69,979.00In the proposed development, SiC JFET control circuitry and normally-off SiC JFET power switch will be integrated in a single SiC chip that will provide digital output for driving piezoelectric, elect ...
SBIRPhase I2005National Aeronautics and Space Administration -
Insertion of an L-band SiC Static Induction Transistor into Missile Defense Radars
Amount: $750,000.00SemiSouth proposes to prototype proprietary self-aligned L-band SiC Static Induction Transistors, with 400 V gate-to-drain breakdown voltage, for radar transmitters. A minimum of 14 wafers will be pr ...
SBIRPhase II2004Department of Defense Missile Defense Agency