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Company Information:

Company Name:
SemiSouth Laboratories
Address:
201 Research Blvd.
Starkville, MS
Phone:
(662) 324-7607
URL:
EIN:
10568116
DUNS:
622392111
Number of Employees:
59
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $1,019,833.00 12
SBIR Phase II $2,999,934.00 4
STTR Phase I $170,000.00 3
STTR Phase II $1,249,988.00 2

Award List:

Vertical Silicon Carbide Transistors for High Power Transmitters (UHF-S-band)

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$71,465.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Janna Dufrene, Device Engineer
Abstract:
Silicon Carbide microwave transistors have yet to realize their full potentialwith regard to signal fidelity, junction operating temperature, and reasonablemanufacturing costs. In this proposal we present new innovative approaches ofsolving these pressing problems through the use of advanced… More

Deep-Level-Free SiC Semi-Insulating Buffer Layers for High-Power RF Transistors 02-014A

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$70,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
John Glesener, VP of Epi Products
Abstract:
"SemiSouth proposes a proprietary technology involving the passivation of one type of shallow acceptor impurity to achieve precision compensation of the opposite type of shallow donor impurity. This Phase I feasibility demonstration represents aninnovative breakthrough in deep-level-free… More

Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems

Award Year / Program / Phase:
2002 / STTR / Phase I
Award Amount:
$70,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Janna B. Dufrene, Device Engineer
Research Institution:
Mississippi State University
RI Contact:
J.b. Casady
Abstract:
SiC JFET technology for control IC's in space based systems enable the possibility of temperature-tolerant, rugged, radiation-hard circuit operation. Additionally, it offers the possibility of combining with SiC power devices, a high level of integration,reduced parts count, reduced cost and weight… More

High Current and Voltage Diodes for Power Switching

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / OSD
Principal Investigator:
Igor Sankin, Senior Device Engineer
Abstract:
The goal of this proposal is to study the feasibility SiC rectifiers in high-voltage, high total current applications. Specifically, the Schottky barrier diode (SBD), JBS diode (JBS), and PiN diode device structures will be studied with strengths andweaknesses of each approach examined based on the… More

Vertical SiC Static Induction Transistor for L-band

Award Year / Program / Phase:
2003 / SBIR / Phase II
Award Amount:
$750,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Igor Sankin, Senior Device Engineer
Abstract:
The Static Induction Transistor (SIT) is a vertical MESFET or JFET type device, which has the gates close together resulting in space charge limited current conduction. Unlike a bipolar junction transistor (BJT), the SIT is a majority carrier device, isvoltage-controlled, and often gives higher… More

Insertion of an L-band SiC Static Induction Transistor into Missile Defense Radars

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$70,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Janna B. Dufrene, Device Engineer
Abstract:
The goal of this proposal is to lay the ground work for the insertion of SiC static induction transistors (SIT) in missle defense radars. The insertion of SiC SIT's would increase system reliability and power while lowering repair/logistics costs ofthese critical systems, therefore paying back the… More

Insertion of an L-band SiC Static Induction Transistor into Missile Defense Radars

Award Year / Program / Phase:
2004 / SBIR / Phase II
Award Amount:
$750,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Janna B. Casady, SiC Device Program Manage
Abstract:
SemiSouth proposes to prototype proprietary self-aligned L-band SiC Static Induction Transistors, with 400 V gate-to-drain breakdown voltage, for radar transmitters. A minimum of 14 wafers will be processed, allowing for thousands of parts to be delivered to system integrators. Parts will be… More

Thick SiC Epitaxy Development for MegaWatt Switching Applications

Award Year / Program / Phase:
2004 / SBIR / Phase I
Award Amount:
$99,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Jie Zhang, Director of Epitaxy Produ
Abstract:
In this proposed work, methods to increase the growth rate for thick, low-doped drift region epilayers required for MW power switch devices are examined. Changing the process parameters (carrier and feed gas ratios, gas flow rates, pressure, temperature) to increase the growth rate are balanced… More

Self-aligned L-band SiC Power MESFET with Improved Current Stability for Ballistic Missile Defense Systems

Award Year / Program / Phase:
2004 / SBIR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Igor Sankin, Senior Device Engineer
Abstract:
In coordination with other ONR and MDA sponsored SiC MESFET development, SemiSouth proposes development of an improved, L or S-band designed SiC MESFET which focuses on a self-aligned process. This self-aligned process requires development of a high-uniformity gate recess etch and an improved,… More

Development of Radiation Hard 4H-SiC Power Switches and Rectifiers for Circuit Applications In Harsh Environments

Award Year / Program / Phase:
2004 / STTR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Janna B. Casady, SiC Device Program Manager
Research Institution:
Auburn University
RI Contact:
John Williams
Abstract:
SiC power switch devices such as Vertical Junction Field Effect Transistors (VJFETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are being developed for power conditioning applications in a variety of rugged environments. While the SiC devices have been well characterized for… More

Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems

Award Year / Program / Phase:
2004 / STTR / Phase II
Award Amount:
$500,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Igor Sankin, Senior Device Engineer
Research Institution:
Mississippi State University
RI Contact:
Robyn Remotigue
Abstract:
SiC Integrated Circuits (IC's) offer the potential for operation over a wide temperature range (77 K to 800 K), and high-radiation environments. In this proposal, we outline a program to transfer and mature patented SiC epitaxy and device technology for use in SiC JFET IC's from Mississippi State… More

Development of Silicon Carbide Thick Epitaxy with High Growth Rate and Near-Perfect Surface for Megawatt Switching Applications

Award Year / Program / Phase:
2005 / SBIR / Phase II
Award Amount:
$750,000.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Janna B. Casady, SiC Device Program Manage
Abstract:
A thick SiC epitaxy process was demonstrated by SemiSouth in Phase I, as the growth (or deposition) rate was boosted from 5 um/h to 20 um/h, and thickness uniformity was kept to 5% or below. In the Phase 2 effort, it is proposed that the processes be developed for production by re-designing and… More

Development of Radiation Hard 4H-SiC Power Switches and Rectifiers for Circuit Applications In Harsh Environments

Award Year / Program / Phase:
2005 / STTR / Phase II
Award Amount:
$749,988.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Janna B. Casady, SiC Device Program Manager
Research Institution:
AUBURN UNIV.
RI Contact:
John Williams
Abstract:
Several new high-power, long range radar systems are under development for near-term upgrades or fielding by MDA, Navy, and Marine Corps, which will use High Voltage GaAs or new WBG Semiconductors (SiC, GaN) in the transmitter/receiver. These systems will require compact, efficient, temperature… More

Decentralized Nonlinear Controller Based SiC Parallel DC-DC Converter

Award Year / Program / Phase:
2005 / SBIR / Phase I
Award Amount:
$69,981.00
Agency:
NASA
Principal Investigator:
Abstract:
This proposal is aimed at demonstrating the feasibility of a Decentralized Control based SiC Parallel DC-DC Converter Unit (DDCU) with targeted application for NASA's International Space Station Program and Satellite Power Systems. The proposed DDCU has three key features: a) "true" redundancy for… More

500?C SiC JFET Driver Circuits and Packaging

Award Year / Program / Phase:
2005 / SBIR / Phase I
Award Amount:
$69,978.00
Agency:
NASA
Principal Investigator:
Abstract:
In the proposed development, SiC JFET control circuitry and normally-off SiC JFET power switch will be integrated in a single SiC chip that will provide digital output for driving piezoelectric, electrostatic, or electromagnetic actuators. Innovative device design, metallurgical ohmic contact and… More

An Innovative Silicon Carbide (SiC) 6-KV, 1-KA Gate Turn Off (GTO) Thyristor

Award Year / Program / Phase:
2007 / SBIR / Phase I
Award Amount:
$99,992.00
Agency:
DOE
Principal Investigator:
Abstract:
A high-voltage, high-current, SiC power switch is required by the existing utility infrastructure and its need to interconnect renewable energy sources to the grid (such as wind and solar photovoltaic). Renewable energy sources require new types of equipment with challenging issues not usually… More

High Voltage High Frequency Switch

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$69,771.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Adndrew Ritenour, Senior Device Engineer
Abstract:
SemiSouth Laboratories, Inc. (SemiSouth), a leading developer and manufacturer of silicon carbide (SiC) power-electronics device technology, proposes the development of a low-cost hybrid switch based on the company's silicon carbide high-voltage junction field effect transistor (JFET) products.… More

Scalable Solid-State Circuit Breaker (SSCB)

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$99,935.00
Agency / Branch:
DOD / OSD
Principal Investigator:
David C. Sheridan, Director of Engineering
Abstract:
Solid-state circuit breakers have significant advantage over electromechanically relays due to the use of various types of solid-state transistors used to control the power flow. These transistors are generally much faster than their mechanical counterparts, switching orders of magnitude, hence… More

Optically Gated, Silicon Carbide (SiC) Semiconductors for Aircraft Electrical Actuator Motor Drives

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$99,711.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Andrew Ritenour, Senior Research Scientist
Abstract:
SemiSouth Laboratories, Inc., a leading developer and manufacturer of silicon carbide (SiC) power semiconductor devices, and OptiSwitch Technology Corporation, a leading developer and manufacturer of light activated semiconductor products, propose the development of a hybrid switch using… More

Optically Gated, Silicon Carbide (SiC) Semiconductors for Aircraft Electrical Actuator Motor Drives

Award Year / Program / Phase:
2010 / SBIR / Phase II
Award Amount:
$749,934.00
Agency:
DOD
Principal Investigator:
Andrew Ritenour, Senior Device Engineer – (662) 324-7607
Abstract:
SemiSouth Laboratories, Inc., a leading developer and manufacturer of silicon carbide (SiC) power semiconductor devices, OptiSwitch Technology Corporation, a leading developer and manufacturer of light activated semiconductor products, and the Center for Advanced Vehicular Systems (CAVS) at… More