TWO-DIMENSIONAL NUMERICAL SIMULATION OF THE GALLIUM ARSENIDE PERMEABLE BASE TRANSITOR USING MOVEMENTS OF BOLTZMAN EQUATION

THERE HAS BEEN IN THE PAST, AND WILL CONTINUE TO BE IN THE FUTURE, APPLICATIONS FOR HIGH FREQUENCY THREE-TERMINAL DEVICES. THE REQUIREMENTS FOR HIGH FREQUENCY DEVICES HAS LED TO THE DEVELOPMENT OVER THE PAST FEW YEARS OF A NUMBER OF NEW DEVICE CONFIGURATIONS. THESE INCLUDE THE PERMEABLE BASE TRANSISTOR, THE PLANER DOPED BARRIER RESISTOR, THE HIGH ELECTRON MOBILITY TRANSISTOR, THE SUB-MICRON GATE GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR, AND MANY OTHERS. TO ACHIEVE THESE HIGH FREQUENCIES REQUIRES NEAR AND SUB-MICRON DIMENSIONED GEOMETRIES, AND THE DESIGNS NEEDED FOR DEVICE FABRICATION RESTS HEAVILY ON AN UNDERSTANDING OF THE DEVICE OPERATION PHYSICS. FOR SUB-MICRON DEVICES THIS OPERATIONAL PHYSICS IS OBTAINED ONLY FROM SOLUTIONS TO THE BOLTZMANN TRANSPORT EQUATION AND INCLUDES SUCH PHENOMENAAS VELODITY OVERSHOOT. THE PURPOSE OF THE PROPOSED PLAN IS TO DESCRIBE THE USE OF AN EXISTING TWO-DIMENSIONAL ALGORITHM FOR SOLVING THE FIRST THREE MOMENTS OF THE BOLTZMANN TRANSPORT EQUATION TO STUDY THE ELECTRICAL CHARACTERISTICS OF A DEVICE OF CONSIDERABLE IMPORTANCE TO THE DEPARTMENT OF DEFENSE'S HIGH FREQUENCY GOALS: THE GALLIUM ARSENIDE PERMEABLE BASE TRANSISTOR.