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Prognostic Capabilities for Field Effect Transistors (FET)

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N68335-07-C-0210
Agency Tracking Number: N061-007-0283
Amount: $1,001,800.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N06-007
Solicitation Number: 2006.1
Timeline
Solicitation Year: 2006
Award Year: 2007
Award Start Date (Proposal Award Date): 2007-04-12
Award End Date (Contract End Date): 2009-04-12
Small Business Information
6595 North Oracle Road Suite 153B
Tucson, AZ 85704
United States
DUNS: 157955597
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: No
Principal Investigator
 Ronald Carlsten
 Principal Investigator
 (520) 742-3300
 ronald.carlsten@ridgetop-group.com
Business Contact
 Douglas Goodman
Title: President and CEO
Phone: (520) 742-3300
Email: doug@ridgetop-group.com
Research Institution
N/A
Abstract

Shrinking semiconductor process geometries (130 nm and below) are increasingly subject to performance, lifetime, and reliability-limiting effects that can cause hard-to-diagnose intermittent failures. One of the most serious emerging reliability problems is called Negative Bias Temperature Instability (NBTI). NBTI is a p-MOSFET degradation mechanism that causes increasing threshold voltage (VT) shifts. Such shifts, if large enough, cause intermittent performance problems in electronic modules, including timing errors and gain accuracy errors. Working with IBM’s Trusted Foundry semiconductor process, Ridgetop will design, develop, and fabricate an NBTI prognostic circuit that measures the VT shift in a p-MOSFET and reports its state-of-health. The p-FET Prognostic Chip will be fabricated in the IBM 130 nm process, with Options for the IBM 90 nm and 65 nm processes. Ridgetop will also provide generic serial data output capability, and as an Option, an I2C-bus interface for use in important military applications, such as the Joint Strike Fighter.

* Information listed above is at the time of submission. *

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