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Surface Plasmon Enhanced Integrated Optical Isolator

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-09-C-0318
Agency Tracking Number: 07SB2-0390
Amount: $749,994.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: SB072-024
Solicitation Number: 2007.2
Timeline
Solicitation Year: 2007
Award Year: 2009
Award Start Date (Proposal Award Date): 2009-03-26
Award End Date (Contract End Date): 2011-06-26
Small Business Information
20 New England Business Center
Andover, MA 01810
United States
DUNS: 073800062
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Juan Montoya
 Principal Scientist
 (978) 689-0003
 montoya@psicorp.com
Business Contact
 B. Green
Title: President and CEO
Phone: (978) 689-0003
Email: green@psicorp.com
Research Institution
N/A
Abstract

Integrated photonics offer the promise of combining many optical devices on a substrate, leading to miniaturization and increased functionality on a chip. Isolators are critical elements for optical systems, since backscattered light creates noise and laser source instability, particularly in integrated platforms where the potential for backscattering increases with device density. Despite the need for integrated optical isolators, practical realization of such devices is challenging due to the lattice mismatch between materials, such as yttrium iron garnet (YIG), utilized to fabricate bulk magneto-optic isolators and materials, typically InP or GaAs, used for integrated photonics. In the Phase I effort, we have designed and modeled a surface-plasmon enhanced optical isolator capable of producing <3dB insertion loss and >30dB isolation that can be integrated with standard III-V semiconductor materials. In Phase II we propose to implement this surface-plasmon isolator design in InP and demonstrate the large isolation and low insertion loss. Complete process methods will be developed for subsequent commercial fabrication and integration with active devices.

* Information listed above is at the time of submission. *

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