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Technology for Producing GaAsP Transparent Photocathodes

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N68335-07-C-0132
Agency Tracking Number: N063-166-0019
Amount: $79,988.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N06-166
Solicitation Number: 2006.3
Timeline
Solicitation Year: 2006
Award Year: 2006
Award Start Date (Proposal Award Date): 2006-12-19
Award End Date (Contract End Date): 2007-06-18
Small Business Information
Photonic Systems Division 20600 Gramercy Place, Bldg 100
Torrance, CA 90501
United States
DUNS: 153865951
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: No
Principal Investigator
 Michael Reznikov
 Director
 (310) 320-3088
 sutama@poc.com
Business Contact
 Gordon Drew
Title: Chief Financial Officer
Phone: (310) 320-3088
Email: gdrew@poc.com
Research Institution
N/A
Abstract

To address the Navy need for an innovative process to fabricate gallium arsenide phosphide (GaAsP) photocathodes to improve photosensor performance parameters including wide dynamic range, uniform QE, reduced cost, and high yield, Physical Optics Corporation (POC) proposes to develop a new process for fabricating GaAsP transparent photocathodes directly on glass substrates. The process is based on new, highly efficient fabrication of GaAsP photocathode directly on an n-type silicon layer. Elimination of bonding to the glass substrate and etching of an initial wafer precludes the distortion of photocathode structure and facilitates integrity thus increasing the yield and enhancing quantum efficiency. The process offers better integrity of the photocathode structure, with reduced stress; improved dynamic range, quantum efficiency, and photocathode uniformity; and increased production yield. Photocathode produced by the new process will then be tested in an existing photodevice. In Phase I POC will demonstrate the feasibility of this innovative process and develop a detailed plan for its implementation in the fabrication of existing photodevices. In Phase II POC will conduct a detailed investigation of each production step, implement the innovative process photodevice fabrication, and demonstrate the parameters of the GaAsP photocathode in the device selected.

* Information listed above is at the time of submission. *

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