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Company Information:

Company Name:
NITEK, INC.
Address:
1804 Salem Church Road
Irmo, SC
Phone:
(803) 530-2338
URL:
N/A
EIN:
208394864
DUNS:
167443170
Number of Employees:
5
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $519,537.00 5
SBIR Phase II $2,722,995.00 4
STTR Phase I $99,960.00 1

Award List:

Large Area, High Power, Vertically Conducting Deep UV LEDs

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$69,963.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Vinod Adivarahan, Senior Scientist
Abstract:
Nitek Inc. proposes to develop deep ultraviolet light emitting diodes having high quantum efficiency, long device lifetime, and large emission area to make usable for force protection objectives of bio-agent threat detection and maneuver sustainment objectives of potable water. The advancements in… More

SBIR PHASE I: Bulk AlN Growth For III-Nitride Devices

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$99,870.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research project is to develop a novel semiconductor growth technique resulting in low dislocation density AlInGaN material that can be used to advance the current state of III-Nitride semiconductor device performance. The growth technique termed Metalorganic Hydride… More

SBIR PHSE I: High Power, Vertically Conducting UV LEDs

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$99,905.00
Agency:
NSF
Principal Investigator:
Abstract:
This SBIR Phase I research program will develop high power, large area, deep ultraviolet LEDs based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based deep ultraviolet LEDs have recently been developed and commercialized. The performance of these UV LEDs has… More

SBIR Phase II: High Power, Vertically Conducting UV LEDs

Award Year / Program / Phase:
2009 / SBIR / Phase II
Award Amount:
$499,305.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase II project will result in the commercialization of high power, large area, deep UV LEDs based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based deep UV-B LEDs (ýý = 300 - 340 nm) have recently been… More

SBIR Phase II: Bulk AlN Growth For III-Nitride Devices

Award Year / Program / Phase:
2009 / SBIR / Phase II
Award Amount:
$493,733.00
Agency:
NSF
Principal Investigator:
Abstract:
This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). This Small Business Innovation Research Phase II project will result in the development of a novel semiconductor growth technique to produce low dislocation density III-nitride AlInGaN substrate… More

AlInN Lattice Matched Barrier HEMTs on Low Defect Bulk and Quasi-Bulk III-Nitride Substrates

Award Year / Program / Phase:
2009 / STTR / Phase I
Award Amount:
$99,960.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Vinod Adivarahan, Senior Scientist
Research Institution:
University of South Carolina
RI Contact:
Asif Khan
Abstract:
The goal of the Phase I program is to demonstrate the feasibility of our technical approach to grow AlInN lattice Matched Barrier HEMTs on low defect Bulk and quasi-bulk III-Nitride Substrates (GaN). This will be accomplished using our pulsed MOCVD growth technique to deposit AlInN films at a… More

AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$99,810.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Abstract:
The goal of the Phase I program is to demonstrate the feasibility of a high-voltage, high-temperature insulating gate AlInN-GaN/i-SiC enhancement-mode HEMT to serve as the basic building block of a power converter/inverter. Our technical approach is to use lattice matched AlInN-GaN epilayers in… More

Large Area, High Power, Vertically Conducting Deep UV LEDs

Award Year / Program / Phase:
2010 / SBIR / Phase II
Award Amount:
$729,984.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Abstract:
This SBIR Phase II project will result in Nitek Inc. commercializing high power, large area, UVC-LED Lamps based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based deep UVC-LEDs (Ar

SBIR Phase I: High power, high efficiency micropixel ultraviolet light emitting lamp

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$149,989.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will result in developing novel high-power, high-efficiency Deep Ultraviolet Light Emitting Diode (DUV LED) Lamps based on an innovative and new micro-pixel device design. Deep ultraviolet light sources with emission wavelengths lambda… More

AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters

Award Year / Program / Phase:
2011 / SBIR / Phase II
Award Amount:
$999,973.00
Agency:
DOD
Principal Investigator:
Vinod Adivarahan, Principal Investigator – (877) 230-5338
Abstract:
The goal of the Phase II program is to fabricate high voltage high power converter/inverters for high frequency/high temperature operation using enhancement mode-depletion mode insulating ate AlInN-GaN/i-SiC transistor building blocks. Our technical approach is to use lattice matched AlInN-GaN… More