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The Growth of InAs/GaSb Type II Superlattices on Si Substrates for Infrared FPAs

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-04-C-7037
Agency Tracking Number: B041-038-0138
Amount: $92,063.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: MDA04-038
Solicitation Number: 2004.1
Timeline
Solicitation Year: 2004
Award Year: 2004
Award Start Date (Proposal Award Date): 2004-06-02
Award End Date (Contract End Date): 2004-12-02
Small Business Information
1801 Maple Avenue
Evanston, IL 60201
United States
DUNS: 129503988
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: No
Principal Investigator
 Vahid Yazdanpanah
 Technical Director
 (847) 256-7648
 yazdan_v@yahoo.com
Business Contact
 Manijeh Razeghi
Title: President
Phone: (847) 256-7648
Email: razeghi@ece.northwestern.edu
Research Institution
N/A
Abstract

High performance infrared detectors in the mid and long wavelength infrared (MWIR and LWIR) spectral bands are highly needed in a number of missile defense missions. Type II InAs/GaSb superlattices represent the most promising material system capable of delivering a more affordable and producible focal plane array (FPA) technology than the current technology, while at the same time exhibiting similar or better performance. Two of the major challenges in the realization of FPA in this system pertain to the unintentionally doped p-type GaSb substrate used in the growth of type II superlattices: its strong infrared absorption and its thermal mismatch with the silicon ROIC that leads to cracking and thus limits the FPA size. It is therefore proposed here to study the feasibility of growing type II InAs/GaSb superlattices on silicon substrates in spite of a lattice mismatch of ~11 %. The design and optimization of an appropriate buffer layer technique will be an essential part of the proposed work.

* Information listed above is at the time of submission. *

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