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High Speed InP OEIC

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: DTRA01-01-P-0185
Agency Tracking Number: 01-0090
Amount: $65,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 2001
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
P.O. Box 161
North Andover, MA 01845
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Noren Pan
 Chief Technology Officer
 (847) 588-3001
 noren_pan@mindspring.com
Business Contact
 Phil McCoy
Title: Chief Financial Officer
Phone: (781) 224-3500
Email: pmccoyesq@aol.com
Research Institution
N/A
Abstract

The feasibility of a high speed InP based OEIC (optoelectronic integrated circuit) will be investigated.The combination of high speed InP based HBT will be integrated with a P-i-n photodetector. The integration of these two deviceswill simplify the material structure, the processing, and the packaging. A prototype of this OEIC will be built in Phase I.Phase II will focus on the improvement of the OEIC to handle data rates in excess of 40 Gb/s,reliability issues, manufacturability, and packaging issues of this circuit.InP based technology has a clear potential to significantly advance the data rate capability of optical communication circuits.The integration of high speed InP based HBT along with the laser and detector components can greatly simplify the circuit and improve the performanceand potentially lower the cost. Commercial application of this technology include high speed internet optical communication networks and high speedlocal area networkslocal area networks, and

* Information listed above is at the time of submission. *

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