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GA AS BY LIQUID PHASE ELECTROEPITAXY IN GALLIUM BISMUTH SOLUTION

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 14366
Amount: $49,182.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1991
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
Po Box 10505
Midland, TX 79702
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dr. Konstanty Mazuruk
 () -
Business Contact
Phone: () -
Research Institution
N/A
Abstract

THE OVERALL OBJECTIVE OF PHASE I OF THIS INNOVATIVE MATERIALS RESEARCH PROGRAM IS TO DEVELOP A HIGH QUALITY, ADVANCED SEMICONDUCTOR MATERIAL, WHICH IS CURRENTLY NOT AVAILABLE TO THE GOVERNMENT OR THE COMMERCIAL MARKETPLACE, USING A VARIATION OF THE LIQUID PHASE ELECTROEPITAXY (LPEE) GROWTH TECHNIQUE. THE SPECIFIC GOAL IS TO ESTABLISH THE ADVANTAGES OF THE LPEE PROCESS FOR PRODUCTION OF BULK SINGLECRYSTALS OF GAAS USING A GA1-XBIX MELT INSTEAD OF A GA MELT AS A SOLVENT. IT IS STRONGLY SUSPECTED THAT THIS RESEARCH APPROACH WILL LEAD TO SIGNIFICANTLY ENHANCED SEMICONDUCTOR MATERIALS FOR GOVERNMENT AND COMMERCIAL DEVICE MANUFACTURERS. THE SUCCESSFUL COMPLETION OF THE PHASE I AND II EFFORTS WILL PROVIDE A REVOLUTIONARY HIGH QUALITY MATERIAL FOR A WIDE RANGE OF GOVERNMENT AND COMMERCIAL APPLICATIONS FAR INTO THE 21ST CENTURY. THIS WOULD DIRECTLY PROVIDE TECHNOLOGICAL AND ECONOMIC BENEFITS TO THE NATION.

* Information listed above is at the time of submission. *

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