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Low Cost High Thermal Conductivity Packaging for SiC Based Motor Drive Designs

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N65538-04-M-0148
Agency Tracking Number: N041-095-1303
Amount: $99,999.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N04-095
Solicitation Number: 2004.1
Timeline
Solicitation Year: 2004
Award Year: 2004
Award Start Date (Proposal Award Date): 2004-05-14
Award End Date (Contract End Date): 2005-10-31
Small Business Information
7960 S. Kolb Rd.
Tucson, AZ 85706
United States
DUNS: 147518286
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Sion Pickard
 Senior Scientist
 (520) 574-1980
 mercorp@mercorp.com
Business Contact
 Raouf Loutfy
Title: President
Phone: (520) 574-1980
Email: rloutfy@mercorp.com
Research Institution
N/A
Abstract

This Small business Innovation Research Phase I project will investigate design and development of SiC based high temperature motor drives. Converter circuit design will be conducted by Rockwell Scientific, to provide high torque output. Innovative high temperature packaging will be developed incorporating high conductivity baseplates composed of ultra high conductivity diamond particles dispersed in a high conductivity metal matrixes known as DiMet materials, integrated with an Aluminum nitride electrical isolation layer to produce the highest conductivity isotropic composite baseplates available today which have high temperature operation capability for SiC packaging. By tailoring the volume loading of diamond in the DiMet, the thermal expansion of the baseplate will be matched with SiC to minimize high temperature thermal mismatch strains. The SiC devices will be directly joined to the baseplate using Transient liquid Phase (TLP) bonding and encapsulated with AlN for high temperature operation. Some limited device testing will be conducted. The tremendous commercial potential of this product is for broad use as a thermal management material in power electronics for SiC, GaAs and Si based devices.

* Information listed above is at the time of submission. *

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