Fabrication of Quantum Effect Transistors and Switches

Using a combination of novel and traditional fabrication techniques, ultra-short gate (110nm) FETs have been fabricated which are sufficiently small, and have sufficiently low capacitance that single electron gating is observed. The devices also exhibit I-V hysteresis in the single electron switching as well as in the classical operation regime (from two different mechanisms). It is expected that these effects may be exploited, resulting in a family of quantum effect components providing unprecedented switching speeds, noise immunity, and low signal operation. We propose a research plan to identify the mechanism behind the single electron switching so it may be further developed for device applications. Phase I efforts will also be directed to optimizing the novel techniques employed in the processing of these unique transistors, while Phase II will concentrate on the development of a ultra-high speed quantum transistor. This family of devices is expected to offer improvements in switching speeds, packing density, and power consumption which are orders of magnitude beyond today's technology. The proposed quantum devices would replace traditional FETs in high-performance computers and digital equipment, and provide increased performance for small signal amplifiers.