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LAWRENCE SEMICONDUCTOR RESEARCH LABORATORY, INC.
UEI: K27PQS4LF5S9
# of Employees: 36
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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Next-Generation Visible Light Photon Counters
Amount: $747,545.0065568 The successful development of high quality plastic wavelength-shifting optical fibers coupled to a plastic scintillator for nuclear and high energy particle detection applications has cre ...
SBIRPhase II2002Department of Energy -
Next-Generation Visible Light Photon Counters
Amount: $0.0065568 The successful development of high quality plastic wavelength-shifting optical fibers coupled to a plastic scintillator for nuclear and high energy particle detection applications has cre ...
SBIRPhase I2002Department of Energy -
Demonstration of Modular Biopower System Using Poultry Waste
Amount: $99,916.0065568 Visible light photon counters, fabricated several years ago for high energy physics research, showed significant promise as compact, high gain, high-efficiency detectors in the wavelength ran ...
SBIRPhase I2001Department of Energy -
Carbon-Doped Polycrystalline Silicon-Germanium Gate Contacts for Low Voltage, Radiation Hard CMOS
Amount: $65,000.00N/A
SBIRPhase I1999Department of Defense Missile Defense Agency -
Strained Silicon Quantum Wells for Cryogenic Electronics
Amount: $69,997.00N/A
SBIRPhase I1999National Aeronautics and Space Administration -
Silicon-Based APD Arrays for 1064 nm LIDAR
Amount: $69,934.00N/A
SBIRPhase I1998National Aeronautics and Space Administration -
PLANAR SILICON APD ARRAYS FOR HIGH RESOLUTION PET
Amount: $99,402.00N/A
SBIRPhase I1998Department of Health and Human Services -
Epitaxial Growth of SiC on Silicon for Radiation Hard Particle Detectors
Amount: $74,873.00181 Epitaxial Growth of SiC on Silicon for Radiation Hard Particle Detectors--Lawrence Semiconductor Research Laboratory, Inc., 2300 West Huntington Drive, Tempe, AZ 85282-3130; (602) 438-2300 Dr. ...
SBIRPhase I1997Department of Energy -
Sigec Heteroepitaxial Layer Growth By Low Temperature, High Purity
Amount: $496,911.00THE GOAL OF THE PROPOSED RESEARCH IS TO DEVELOP A PROCESS GROW DEVICE QUALITY Si-Ge-C STRAIN LAYERS HETEROEPITAXIALLY ONTO SINGLE CRYSTAL SILICON SUBSTRATES. Si-Ge-C ALLOYS WILL MAKE POSSIBLE A NEW CL ...
SBIRPhase II1996Department of Defense Missile Defense Agency -
GROWTH OF EPITAXIAL OXIDE FILMS ON SILICON
Amount: $50,000.00THE RESARCH DEMONSTRATES EPITAXIAL GROWTH, BY LASER ABLATION IN A UHV VACUUM SYSTEM OF HIGH QUALITY, INSULATING OXIDE FILMS ONTO HEATED SINGLE CRYSTAL SILICON SUBSTRATES, FOLLOWED BY CVD EPITAXIAL GRO ...
SBIRPhase I1993National Science Foundation