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GaN-based Schottky Diodes for Power Converters in X-band Radar Power Supplies
Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-09-C-0126
Agency Tracking Number: B083-029-0493
Amount:
$99,970.00
Phase:
Phase I
Program:
SBIR
Solicitation Topic Code:
MDA08-029
Solicitation Number:
2008.3
Timeline
Solicitation Year:
2008
Award Year:
2009
Award Start Date (Proposal Award Date):
2009-03-27
Award End Date (Contract End Date):
2009-09-27
Small Business Information
8829 Midway West Road
Raleigh, NC
27617
United States
DUNS:
020080607
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Drew Hanser
Title: Chief Technology Officer
Phone: (919) 789-8880
Email: hanser@kymatech.com
Title: Chief Technology Officer
Phone: (919) 789-8880
Email: hanser@kymatech.com
Business Contact
Name: Carole Davis
Title: Contracts Administrator
Phone: (919) 789-8880
Email: davis@kymatech.com
Title: Contracts Administrator
Phone: (919) 789-8880
Email: davis@kymatech.com
Research Institution
N/A
Abstract
Kyma Technologies proposes to develop high performance GaN-based Schottky barrier diodes (SBDs) using high quality native GaN substrates. The inherent properties of the native substrate and the high quality epitaxy will enable novel technology advances beyond the current GaN SBD state of the art, and these devices will benefit power converters in X-band radar power supplies through fast, low-loss switching capabilities. Kyma will leverage existing partnerships with highly experienced research teams at North Carolina State University and Auburn University for device epitaxy and processing, respectively.
* Information listed above is at the time of submission. *
