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Aeropropulsion and Power Technology

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8650-05-M-2597
Agency Tracking Number: F051-192-2970
Amount: $99,882.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: AF05-192
Solicitation Number: 2005.1
Timeline
Solicitation Year: 2005
Award Year: 2005
Award Start Date (Proposal Award Date): 2005-03-31
Award End Date (Contract End Date): 2006-03-31
Small Business Information
2766 Indian Ripple Rd
Dayton, OH 45440
United States
DUNS: 884812025
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 William Lanter
 Engineering Physicist
 (937) 255-5179
 william.lanter@wpafb.af.mil
Business Contact
 Larry Goss
Title: President
Phone: (937) 429-4980
Email: gosslp@innssi.com
Research Institution
N/A
Abstract

High energy density capacitors are vital for the mission of the Air Force in many areas. They will improve the development of advanced directed-energy weapons such as airborne lasers and high-pulse microwaves, where an increase in specific energy density will enable an increase in power, reducing the amount of time-on-target needed for destruction or increasing the range and reducing vulnerability of the systems. In this Phase I program, select carbon nitride (CNx) growth parameters, using well-controlled ion-beam assisted ion-beam sputter plasma deposition will be investigated for use as a capacitor dielectric. Flat-plate capacitors will be constructed. Surface, thermal, compositional, and electrical characteristics of the resulting thin films will be studied. During the subsequent Phase II program, the CNx film growth and dielectric properties will be optimized using the resulting CNx electrical characteristics. Additionally in Phase II, the most suitable method for scaling the size of the capacitors will be determined. Among the criteria considered for size scaling of the dielectric will be 1) determining the largest growth area with minimal defects; 2) suitability of rolling the film without introducing fractures, and 3) constructing stackable capacitors.

* Information listed above is at the time of submission. *

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