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FABMETRIX INC

Company Information
Address
2141 E EUCLID AVE
PHOENIX, AZ 85042-8121
United States


http://www.nanotem.com

Information

UEI: KALUKJ7E3644

# of Employees: 5


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. CHARGE COLLECTION SCANNING TRANSMISSION ELECTRON MICROSCOPY FOR ADVANCED INFRARED SEMICONDUCTOR DEVICES

    Amount: $551,511.44

    Electron beam-induced current in scanning transmission electron microscopy technique will be required in order to gain insight and actionable information for development of crystal defect reduction an ...

    SBIRPhase II2020Department of Defense Army
  2. Charge collection scanning transmission electron microscopy for advanced infrared semiconductor devices

    Amount: $161,675.31

    Techniques for the reduction of growth-induced crystal defects are of critical importance to the efforts geared toward development of thin-film heteroepitaxial materials and devices for infrared senso ...

    SBIRPhase I2019Department of Defense Army
  3. Electronic Component Fingerprinting to Determine Manufacturing Origin

    Amount: $999,014.00

    In the area of supply chain integrity improvement, the US defense and intelligence sectors anticipate multiple uses for the forensic capability to characterize an electronic component for the purpose ...

    SBIRPhase II2014Department of Defense Defense Advanced Research Projects Agency
  4. A Rapid and Cost-Effective Approach to Nanostructural Analysis of Semiconductor Devices

    Amount: $736,328.00

    An expedited and economical nanostructural sampling and analysis of semiconductor devices will be crucial to accelerated product development and rapid introduction of these technologies to the market ...

    SBIRPhase II2010Department of Defense Air Force
  5. VLWIR HgCdTe FPA Reliability and Yield Enhancement through Nanostructural Analysis

    Amount: $983,746.00

    The state-of-the-art FPA manufacturing technologies commonly generate some critical defects in the pixel elements, which adversely impact their operability and reliability. In Phase I, the feasibilit ...

    SBIRPhase II2010Department of Defense Missile Defense Agency
  6. VLWIR HgCdTe FPA Reliability and Yield Enhancement through Nanostructural Analysis

    Amount: $99,998.00

    This Phase I proposal seeks to demonstrate the feasibility of characterizing the depletion region of a VLWIR HgCdTe photodiode in plan-view and in nano-scale to detect and study the structural anomali ...

    SBIRPhase I2009Department of Defense Missile Defense Agency
  7. A Rapid and Cost-Effective Approach to Nanostructural Analysis of Semiconductor Devices

    Amount: $99,997.00

    Phase I proposal focuses on the demonstration of the feasibility to improve the efficiency and to lower the cost associated with nanostructural analysis of semiconductor devices by implementing a two- ...

    SBIRPhase I2009Department of Defense Air Force
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