Next-Generation Detector and Imager Development

Award Information

Agency: Department of Energy	Branch: N/A	Award ID: 99406	Program Year/Program: 2010 / SBIR
Agency Tracking Number: 95095	Solicitation Year: N/A	Solicitation Topic Code: 44 d	Solicitation Number: N/A

Small Business Information: American Semiconductor, Inc.
3100 S. Vista Ave., Suite 230 Boise, ID -
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 1: Fiscal Year: 2010

Title: Next-Generation Detector and Imager Development

Agency: DOE

Contract: DE-FG02-10ER85943

Award Amount: $99,971.00

Abstract:
Improvements in silicon-on-insulator (SOI) technology have resulted in development of monolithic chip designs for radiation image sensors and particle detectors by facilitating the use of the handle silicon layer for the detectors and the SOI layer for the readout circuits. Unfortunately, even the most advanced SOI-based imagers are still limited in effectiveness due to threshold (Vt) shifts when bias voltages are applied to fully deplete the handle silicon for detector performance. The required bias voltage range causes severe shifts in the Vt of the CMOS transistors of the readout circuitry. Flexfet SOI

Principal Investigator:
Richard Hayhurst
Dr.
2083362773
rickhayhurst@americansemi.com

Business Contact:
Lorelli Hackler
Dr.
2083362773
lhackler@americansemi.com

Small Business Information at Submission:

American Semiconductor, Inc.
3100 S. Vista Avenue Suite 230 Boise, ID 83705

EIN/Tax ID: 820537154

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No