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Thermoelectric Cooling of Photodetector Arrays with HgCdTe-based Superlattices

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-05-C-0090
Agency Tracking Number: A054-013-0046
Amount: $99,952.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A05-T013
Solicitation Number: N/A
Timeline
Solicitation Year: 2005
Award Year: 2005
Award Start Date (Proposal Award Date): 2005-08-15
Award End Date (Contract End Date): 2006-02-11
Small Business Information
590 Territorial Drive, Suite B
Bolingbrook, IL 60440
United States
DUNS: 068568588
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Silviu Velicu
 Senior Engineer
 (630) 771-0206
 svelicu@epir.com
Business Contact
 Sivalingam Sivananthan
Title: President
Phone: (630) 771-0201
Email: siva@epir.com
Research Institution
 UNIV. OF ILLINOIS AT CHICAGO
 Yong Chang
 
Department of Physics, 845 W. Taylor St.
Chicago, IL 60607
United States

 (312) 413-0041
 Nonprofit College or University
Abstract

The most challenging degrading effect on current state-of-the-art focal plane arrays is caused by the random spatial and temporal photoresponse nonuniformity of the pixels. We propose a major improvement by controlling the temperature of individual pixels with individual thermoelectric coolers. We will use HgxCd1-xTe/HgyCd1-yTe superlattices (SLs) as the thermoelectric material. Two major benefits lead us to this choice. First, HgCdTe, the principal material used in infrared photon imaging applications, can be directly grown on HgxCd1-xTe/HgyCd1-yTe SLs, making the integration of infrared sensors and thermoelectric elements possible. Second, a recent model showed that a Hg0.75Cd0.25Te/Hg0.7Cd0.3Te SL can achieve a thermoelectric figure of merit ZT of 1.99, two times greater than that of current thermoelectric devices based on Bi2Te3. In Phase I, we will develop an accurate model of the thermoelectric properties of HgxCd1-xTe/HgyCd1-yTe SL structures and we will optimize the material parameters to maximize ZT. Next, we will address the growth of HgxCd1-xTe/HgyCd1-yTe SLs by partnering with the University of Illinois at Chicago, which has extensive experience with the growth of HgTe/CdTe SLs and HgCdTe. Finally, we will develop device structures and metallization methods for performing ZT measurements, measure ZTs of the devices and compare them to theory.

* Information listed above is at the time of submission. *

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