High Performance Longwave Infrared (LWIR) HgCdTe on Silicon

It is critical in the field on infrared imaging to reduce array costs and simultaneously improve their performance. We propose to achieve both. The use of long wavelength infrared HgCdTe grown on Si substrates will reduce the array costs, increase its mechanical strength and permit the fabrication of larger area arrays than present-day technology based on bulk CdZnTe substrates. Performance enhancements result from the passivation of defects created by the lattice mismatch between HgCdTe and Si. We will develop a reliable method to passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. The success of this program will be demonstrated by the fabrication of high performance long-wavelength infrared detectors on Si substrates.