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DEVELOPMENT OF SIGE HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) PRODUCTION TECHNOLOGY

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 12453
Amount: $49,810.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1990
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
35 Elizabeth Ave
Somerset, NJ 08873
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dr Gary S Tompa
 (201) 271-9090
Business Contact
Phone: () -
Research Institution
N/A
Abstract

THIS PROPOSAL ADDRESSES THE EPITAXIAL GROWTH OF SI/SIGE HBT DEVICES. THIS WILL BE ACCOMPLISHED USING AN ULTRAHIGH VACUUM EPITAXIAL GROWTH SYSTEM COMBINED WITH THE DEVELOPMENT OF AN ADVANCED, CARRIER GAS BASED, VAPOR TRANSPORT TECHNIQUE OPERATING IN THE 10(-3) - 10(-6) TORR RANGE. THE TECHNIQUE IS CALLED VAPOR TRANSPORT EPITAXY (VTE). GROUP IV MATERIALS SUCH AS SI/SIGE ARE OF PARTICULAR INTEREST, SINCE THEY PROMISE TO BE THE NEXT GENERATION IN HIGH SPEED SI BASED DEVICES. IN PHASE I, THE GROWTH AND MATERIALS CHARACTERISTICS OF SI/SIGE STRUCTURES WOULD BE DETERMINED. IN PHASE II DOPING TECHNIQUES WOULD BE ESTABLISHED AND FUNCTIONAL DEVICES WOULD BE FABRICATED AND CHARACTERIZED. ALSO IN PHASE II FET STRUCTURES WILL BE INVESTIGATED. ???????????

* Information listed above is at the time of submission. *

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