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Electro-optek Corp

Company Information
Address
3152 Kashiwa Street
Torrance, CA 90505
United States



Information

UEI: N/A

# of Employees: 30


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: Yes

Woman Owned: Yes



Award Charts




Award Listing

  1. Ultra Radiation-Hard, Ultra-Dense, Fast Nonvolatile GaAs Random Access Memory

    Amount: $300,000.00

    Electro-Optek proposes to develop a radiation-hard, non-volatile random access memory using an epitaxial InSb Hall element fabricated on gallium arsenide (GaAs) in conjunction with a thin-film layer o ...

    SBIRPhase II1993Department of Defense Missile Defense Agency
  2. Dual-Mode Imager for Positive Identification of Friendly Vehicles in Combat

    Amount: $47,833.00

    We propose to develop a dual-mode sensor for positive all-weather identification of friendly vehicles in combat using 2-dimensional arrays of All-xGaxAs multiple quantum wells (MQWs) for detection lon ...

    SBIRPhase I1993Department of Defense Army
  3. TWO-DIMENSIONAL LONG WAVELENGTH BOLOMETER ARRAYS FOR ASTRONOMY APPLICATIONS

    Amount: $33,320.00

    RESARCHERS ARE DEVELOPING A NOVEL AND INNOVATIVE METHOD TO FABRICATE LARGE-AREA, LONG WAVELENGTH INFRARED (LWIR) DETECTOR ARRAYS THAT CAN BE OPERATED AT ROOM AS WELL AS CRYOGENIC TEMPERATURES. THE TEC ...

    SBIRPhase I1993National Science Foundation
  4. IN-SITU GROWTH OF INDIUM ARSENIDE ANTIMONIDE LONGWAVELENGTH PHOTODIODES

    Amount: $252,228.00

    THE RECENT ADVANCES IN BANDGAP ENGINEERING BY MOLECULAR BEAM EPITAXY (MBE) HAVE PRODUCED A STRAINED SUPERLATTICE (SSL) OF INSB/INA -XSBX CAPABLE OF BEING MADE INTO PHOTODIODE DETECTORS SUITABLE FOR TH ...

    SBIRPhase II1992National Science Foundation
  5. A NOVEL 3-DIMENSIONAL CHIP CONNECTION SYSTEM USING TRENCH FILLED METALLIC PLUGS

    Amount: $46,226.00

    CONVENTIONAL TWO-DIMENSIOANL INTEGRATED CIRCUITS DESPITE THEIR CONSPICUOUS PROGRESS IN SUBMICRON DOMAIN HAVE ALMOST REACHED THEIR LIMITS IN PACKING DENSITY. ONE WAY TO ACHIEVE A HIGH LEVEL OF INTEGRAT ...

    SBIRPhase I1992Department of Defense Air Force
  6. Radiation Hard Silicon Schottky Barrier LWIR Focal Plane Arrays

    Amount: $49,614.00

    Electro-Optek proposes to fabricate ultra radiation hard, high-sensitivity, long wavelength infrared focal plane arrays using IrSi3/Si Schottky Barrier (SB) infrared detectors grown by molecular beam ...

    SBIRPhase I1992Department of Defense Missile Defense Agency
  7. LARGE SCALE BOLOMETER ARRAY FOR FAR IR GLINT RETURN TRACKING

    Amount: $49,127.00

    WE PROPOSE TO DEVELOP A NOVEL AND INNOVATIVE METHOD OF FABRICATING LARGE-AREA LONG WAVELENGTH INFRARED (LWIR) DETECTOR ARRAYS THAT CAN BE OPERTED AT ROOM TEMPERATURE FOR FAR INFRARED ACTIVE GLINT RETU ...

    SBIRPhase I1992Department of Defense Army
  8. ULTRA-HARD, SI-BASED LWIR FPA FOR ADVANCED SEEKERS

    Amount: $48,240.00

    ELECTRO-OPTEK PROPOSES TO DEVELOP AN INNOVATIVE LARGE-AREA, LONG WAVELENGTH INFRARED (LWIR) DETECTOR ARRAY THAT CAN OPERATE AT ROOM AS WELL AS CRYOGENIC TEMPERATURES, AND IS EXTREMELY RADIATION HARD. ...

    SBIRPhase I1992Department of Defense Defense Threat Reduction Agency
  9. LASER DETECTION AND RANGING ARRAYS FOR REENTRY AND OUTGOING TARGET TRACKING AT THE KWAJALEIN ATOLL FACILITY

    Amount: $47,680.00

    WE PROPOSE TO DEVELOP A LASER DETECTION AND RANGING (LADAR) TECHNIQUE FOR AIRBORNE TARGET DETECTION AND TRACKING AT RANGES OF 10 KM OR GREATER. WE WILL DEVELOP THE SEL ARRAY USING INGAAS/GAAS MULTIPLE ...

    SBIRPhase I1992Department of Defense Army
  10. HIGH PERFORMANCE CMOS DIGITAL INTEGRATED CIRCUITS USING SI1-XGEX PMOSFETS

    Amount: $49,990.00

    WE PROPOSE TO DEVELOP ULTRA FAST LSI/VLSI CMOS CIRCUITS USING SI1-XGEX CHANNEL PMOS AND SI CHANNEL NMOS DEVICES INTEGRATED ON THE SAME CHIP SUITABLE FOR STRATEGIC DEFENSE SYSTEMS. SINCE THE MOBILITY O ...

    SBIRPhase I1992Department of Defense Defense Advanced Research Projects Agency
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