We propose to develop 5 element, linear, monolithic, InGaAs-on-Silicon, spectrally selective detector arrays for the near-infrared spectrum (1.0 - 1.7 um). The technique of selective epitaxy will be used to grow (100x100) um area detector mesas on the silicon substrate. Special methods will be used… More

We propose to develop a novel technology for fabricating high speed integrated photoreceiver MMIC chips on the InP substrate. The in- novation consists of a new, unique, optically resonant, high speed InO.53GaO.47As photodetector that has a wavelength selective response. This resonant detector not… More

A solution to the problem of interchip interconnects is proposed that employs electro-optical links implemented monolithically on silicon substrates. This approach addresses the fundamental material incompatibility problem of opto-electronics by implementing electronics in silicon and optical… More

The goal of the proposed development is the creation of multilevel photonic modules comprised of monolithic, InGaAs / InP p-i-n photodetector - p-HEMT power amplifier, Opto-electronic integrated circuit (OEIC), that has 60 GHz bandwidth and output power of 100 mW. The photodetector will have a high… More

In Phase I, we propose to develop high saturation current photodiodes that will meet the following design criteria: (a) Responsivity > 0.7 A/W, (b) 1 dB compression current > 100 mA, (c) Bandwidth > 10 GHz, and (d) Wavelength response of 1300 to 1550 nm. Two different photodiode designs will be… More

In Phase II, we propose to develop high saturation current photodiodes that will meet the following design criteria: (a) Responsivity > 0.65 A/W, (b) 1 dB compression current > 100 mA, (c) Bandwidth DC to 18 GHz,(d) Wavelength response of 1300 to 1550 nm, and (e) OIP3 of +50 dBm. Three different… More

Conversion of highly stable optical clocks into electrical clocks through photodetection introduces excess phase noise and degrades the frequency stability by two to three orders of magnitude.

Gravity wave detection using space-based long-baseline laser interferometric sensors imposes stringent noise requirements on the system components, including the large area photoreceiver front ends. The proposed innovation utilizes dual depletion region technology to produce a large area (1mm… More

Conversion of highly stable optical clocks into electrical clocks through photodetection introduces excess phase noise, thereby degrading the frequency stability. This noise is primarily generated due to the conversion of optical intensity noise into electrical phase noise by photodiode¿s… More

We propose to demonstrate a photonic radio-frequency (RF) arbitrary waveform generator (AWG) having (1) 3 dB bandwidth = 10 GHz, (2) time aperture > 2 ns (time-bandwidth product > 20), and (3) maximum RF output amplitude > 3 V. This performance will be facilitated by our proposed highly linear,… More

Broadband focal plane arrays, operating in UV-to-SWIR wavelength range, are required for atmospheric monitoring of greenhouse gases. Currently, separate image sensors are used for different spectral sub-bands: GaN for UV, Si for visible, and InGaAs for SWIR, requiring expensive component-level… More

We propose to design and develop 2x2 quad p-i-n InGaAs Photoreceivers having the following characteristics: (a) Active area diameter 0.75 mm; (b) Wavelength coverage 850 to 1700 nm, with responsivity of 0.7 A/W at 1064 nm; (c) Bandwidth up to 20 MHz for the individual quadrant; (d) Group Delay < 6… More

We propose to develop high-power, highly linear photodiodes having the following specifications at 1550 nm wavelength per photodiode: (1) 3 dB bandwidth > 20 GHz, (2) DC photocurrent > 200 mA, (3) maximum RF output power > 1 W, (4) two-tone OIP3 > 55 dBm, and (5) power-to-phase conversion factor < 3… More

Broadband focal plane arrays, operating in UV-to-SWIR wavelength range, are required for atmospheric monitoring of greenhouse gases. Currently, separate image sensors are used for different spectral sub-bands: GaN for UV, Si for visible, and InGaAs for SWIR, requiring expensive component-level… More