You are here

Enhanced Light Absorption in thin InGaN Layers for Radiation Hard Solar Cells Using Nano-Patterned Metallic Films

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-10-C-0054
Agency Tracking Number: 09SB2-0362
Amount: $137,881.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: SB092-017
Solicitation Number: 2009.2
Timeline
Solicitation Year: 2009
Award Year: 2010
Award Start Date (Proposal Award Date): 2010-02-23
Award End Date (Contract End Date): 2011-02-28
Small Business Information
3701 E. University Drive
Phoenix, AZ 85213
United States
DUNS: 117757208
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Iulian Gherasoiu
 project manager
 (602) 431-4782
 iulian.gherasoiu@flipchip.com
Business Contact
 Bob Forcier
Title: CEO
Phone: (602) 431-4701
Email: bob.forcier@flipchip.com
Research Institution
N/A
Abstract

We propose to develop and deliver a nano-patterned metallic light trap platform that will allow ultra-thin InGaN photovoltaics to exhibit extended lifetime by a factor of four when used in low orbit satellite operations. We will test the enhancement of light absorption in InGaN layers with In fraction of 25% for use as an effective method of realizing radiation ultra-hard solar cells for space-based applications. Towards this goal we will deposit metallic films with a thickness bellow 100nm, and optimize the groove / grid pattern design to ensure the coupling to above bandgap light with a wavelength in the range from of 505nm to 520nm.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government