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Enhanced Light Absorption in thin InGaN Layers for Radiation Hard Solar Cells Using Nano-Patterned Metallic Films
Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W91CRB-11-C-0012
Agency Tracking Number: 09SB2-0362
Amount:
$662,502.00
Phase:
Phase II
Program:
SBIR
Solicitation Topic Code:
SB092-017
Solicitation Number:
2009.2
Timeline
Solicitation Year:
2009
Award Year:
2010
Award Start Date (Proposal Award Date):
2011-01-24
Award End Date (Contract End Date):
2013-05-31
Small Business Information
3701 E. University Drive
Phoenix, AZ
85213
United States
DUNS:
117757208
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Iulian Gherasoiu
Title: project manager
Phone: (602) 431-4782
Email: iulian.gherasoiu@flipchip.com
Title: project manager
Phone: (602) 431-4782
Email: iulian.gherasoiu@flipchip.com
Business Contact
Name: Bob Forcier
Title: CEO
Phone: (602) 431-4701
Email: bob.forcier@flipchip.com
Title: CEO
Phone: (602) 431-4701
Email: bob.forcier@flipchip.com
Research Institution
N/A
Abstract
We propose to develop and deliver a nano-patterned metallic light trap platform that will allow ultra-thin InGaN photovoltaics to exhibit extended lifetime by a factor of four when used in low orbit satellite operations. We will test the enhancement of light absorption in InGaN layers with In fraction of 25% for use as an effective method of realizing radiation ultra-hard solar cells for space-based applications. Towards this goal we will deposit metallic films with a thickness bellow 100nm, and optimize the groove / grid pattern design to ensure the coupling to above bandgap light with a wavelength in the range from of 505nm to 520nm.
* Information listed above is at the time of submission. *