Phase I objective includes completion of the Engineering design of the HgCdTe annealing apparatus and to deliver a sufficiently complete schematic design to the Government for their evaluation. Phase II plan entails building and delivering the annealing apparatus to anneal 3-inch large HgCdTe… More

Phase I work will focus on demonstrating the feasibility of our proposed approach to fabricate type-II strained-layer superlattice FPAs based on III-V materials with improved state of the art in performance. Phase II effort will be directed at validating the approach with demonstration of large… More

Phase I objective is to demonstrate the feasiblility of our proposed approach to minimize the defect and dislocation size and densities in Si substrate based HgCdTe epitaxial layers with a cut off wavelength of ~10 microns at 77 K. Phase II effort will validate our approach with demonstration of… More

Phase I objective is to demonstrate the feasibility of our approach to reduce the dislocation density to below 1E5 cm-2 in LWIR HgCdTe epitaxial layers grown on Si substrates. Phase II objective is to demonstrate dislocation density to below 1E5 cm-2 reproducibly in LWIR HgCdTe epitaxial layers… More