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Company Information:

Company Name:
IRDT Solutions, Inc
Address:
2850 Mesa Verde Drive East, Unit 103
Costa Mesa, CA
Phone:
N/A
URL:
N/A
EIN:
270150618
DUNS:
830609090
Number of Employees:
1
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $319,851.00 3
SBIR Phase II $519,799.00 1
STTR Phase I $199,885.00 2

Award List:

An Innovative Annealing Apparatus for Mercury-Based, Compound Semiconductors

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$69,960.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Honnavalli Vydyanath, Chief Scientist
Abstract:
Phase I objective includes completion of the Engineering design of the HgCdTe annealing apparatus and to deliver a sufficiently complete schematic design to the Government for their evaluation. Phase II plan entails building and delivering the annealing apparatus to anneal 3-inch large HgCdTe… More

Development and Demonstrattion of High Performance Infrared Focal Plane Arrays with Advanced Quantum Structures

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$99,916.00
Agency:
DOD
Principal Investigator:
Honnavalli R. Vydyanath, Chief Scientist – (714) 717-6675
Abstract:
Phase I work will focus on demonstrating the feasibility of our proposed approach to fabricate type-II strained-layer superlattice FPAs based on III-V materials with improved state of the art in performance. Phase II effort will be directed at validating the approach with demonstration of large… More

Defect Reduction Techniques for Large Format Infrared Detector Materials

Award Year / Program / Phase:
2012 / STTR / Phase I
Award Amount:
$99,916.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Honnavlli R. Vydyanath, Chief Scientist – (714) 717-6675
Research Institution:
Rensselaer Polytechnic Institute
RI Contact:
Richard E. Scammell
Abstract:
Phase I objective is to demonstrate the feasiblility of our proposed approach to minimize the defect and dislocation size and densities in Si substrate based HgCdTe epitaxial layers with a cut off wavelength of ~10 microns at 77 K. Phase II effort will validate our approach with demonstration of… More

Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$149,975.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Honnavalli R. Vydyanath, Chief Scientist – (714) 717-6675
Abstract:
Phase I objective is to demonstrate the feasibility of our approach to reduce the dislocation density to below 1E5 cm-2 in LWIR HgCdTe epitaxial layers grown on Si substrates. Phase II objective is to demonstrate dislocation density to below 1E5 cm-2 reproducibly in LWIR HgCdTe epitaxial layers… More

An improved passivation process for the fabrication of high performance antimony based III-V superlattice materials

Award Year / Program / Phase:
2013 / STTR / Phase I
Award Amount:
$99,969.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Honnavalli R. Vydyanath, Chief Scientist – (714) 717-6675
Research Institution:
Rensselaer Polytechnic Institute
RI Contact:
Richard E. Scammell
Abstract:
Phase I objective is to demonstrate the feasibility of our proposed passivation approach to minimize the dark current noise and improve the quantum efficiency in the GaSb based type II superlattice detectors. Phase I goal is to demonstrate the feasibility of our technology to fabricate photodiodes… More

Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates

Award Year / Program / Phase:
2013 / SBIR / Phase II
Award Amount:
$519,799.00
Agency:
DOD
Principal Investigator:
Honnavalli Vydyanath, Chief Scientist – (714) 717-6675
Abstract:
The technical objective of the Phase II effort is to implement the ideas developed in Phase I work to improve the thermal cycle annealing procedures and HgCdTe epitaxial growth procedures with the goal to demonstrate our approach to reduce the dislocation density to ~1x105 cm-2 and lower in LWIR… More