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CREE RESEARCH, INC.

Company Information
Address
4600 Silicon Drive
Durham, NC 27703
United States
Information

UEI: JENFAUM1C7L6

# of Employees: 44
Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No

Award Charts




Award Listing

  • Record 1 TO 34

  1. Uniform Silicon Carbide Epitaxial Layers by Hot Wall Chemical Vapor Deposition

    Amount: $749,100.00

    N/A

    SBIRPhase II2000Department of Defense Air Force

  2. Uniform Silicon Carbide Epitaxial Layers by Hot Wall Chemical Vapor Deposition

    Amount: $99,061.00

    N/A

    SBIRPhase I1999Department of Defense Air Force

  3. N/A

    Amount: $746,741.00

    N/A

    SBIRPhase II1999Department of Defense Air Force

  4. N/A

    Amount: $749,624.00

    N/A

    SBIRPhase II1999Department of Defense Army

  5. DEVELOPMENT OF HIGH TEMPERATURE 4H-SiC POWER ACCUFET

    Amount: $99,981.00

    4H-silicon carbide power devices are expected to have 3x higher current densities and 200x lower on-resistance, while still operating up to 350 degree C. This is because of an order of magnitude high ...

    SBIRPhase I1998Department of Defense Air Force

  6. Evaluaation of alternative High-Temperature high-Field Dielectrics for SiC Devices

    Amount: $99,969.00

    Silicon Carbide is exceptionally well suited for high temperature, high-power electronics. These electronics would be ideal for high-temperature applications for electric combat vehicles, including v ...

    SBIRPhase I1998Department of Defense Army

  7. Development of a High Temperature Silicon Carbide CMOS Technology

    Amount: $750,000.00

    The development of a process for growing single crystal boules of 6H-SiC at the firm has lead to rapid advances in SiC device development and performance including production of the world's only comme ...

    SBIRPhase II1997Department of Defense Missile Defense Agency

  8. High Voltage, High Current 4H-SiC Bipolar Power Devices

    Amount: $600,000.00

    The rapid development of the technology of producing high quality single crystal SiC wafers and thin film presents the opportunity to fabricate solid-state devices with power-temperature capability fa ...

    SBIRPhase II1997Department of Defense Navy

  9. Development of GaN/AlGaN HEMT's on Silicon Carbide

    Amount: $749,331.00

    There is a need for high power solid state devices operating in the millimeter wave frequency range for both radar applications and high frequency communications networks. While GaAs an InP technolog ...

    SBIRPhase II1997Department of Defense Army

  10. Development of GaN/AlGaN HEMT's on Silicon Carbide

    Amount: $69,615.00

    N/A

    SBIRPhase I1996Department of Defense Army
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