You are here
The IIIAN Company, LLC
UEI: N/A
# of Employees: 2
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
-
GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions
Amount: $600,000.00The innovations proposed here are Ka-band (38 GHz) group III-nitride power FETs and the dislocation density reducing epitaxial growth methods (LPE) needed for their optimal performance and reliability ...
SBIRPhase II2011National Aeronautics and Space Administration -
Group III-Nitride LNAs for Microwave Radiometry
Amount: $100,000.00This phase I proposal addresses the need for microwave and millimeter wave Low Noise Amplifiers (LNAs) for remote sensing applications of the earth's atmosphere. In this work, IIIAN proposes usi ...
SBIRPhase I2011National Aeronautics and Space Administration -
GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions
Amount: $99,582.00This SBIR proposal addresses the liquid phase epitaxy (LPE) of gallium nitride (GaN) films using nitrogen-enriched metal solutions. Growth of GaN from solutions offers the possibility of drastically r ...
SBIRPhase I2010National Aeronautics and Space Administration