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Company Information:

Company Name: The IIIAN Company, LLC
City: Minneapolis
State: MN
Zip+4: 55406-1575
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $199,582.00 2
SBIR Phase II $600,000.00 1

Award List:

GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency: NASA
Principal Investigator: Jody Klaassen, Principal Investigator
Award Amount: $99,582.00
Abstract:
This SBIR proposal addresses the liquid phase epitaxy (LPE) of gallium nitride (GaN) films using nitrogen-enriched metal solutions. Growth of GaN from solutions offers the possibility of drastically reducing the density of line defects. As these defects adversely affect both breakdown voltages and… More

GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions

Award Year / Program / Phase: 2011 / SBIR / Phase II
Agency: NASA
Principal Investigator: Jody Klaassen, Principal Investigator
Award Amount: $600,000.00
Abstract:
The innovations proposed here are Ka-band (38 GHz) group III-nitride power FETs and the dislocation density reducing epitaxial growth methods (LPE) needed for their optimal performance and reliability.Ka-band power transistors with >60% Power Added Efficiency (PAE) are not commercially available.… More

Group III-Nitride LNAs for Microwave Radiometry

Award Year / Program / Phase: 2011 / SBIR / Phase I
Agency: NASA
Principal Investigator: Jody Klaassen, Principal Investigator
Award Amount: $100,000.00
Abstract:
This phase I proposal addresses the need for microwave and millimeter wave Low Noise Amplifiers (LNAs) for remote sensing applications of the earth's atmosphere. In this work, IIIAN proposes using group III-nitride materials, specifically AlGaN/GaN HEMT structures, to fabricate LNAs for… More