USA flag logo/image

An Official Website of the United States Government

Company Information:

Company Name:
The IIIAN Company, LLC
Address:
2700 East 28th Street, Suite 120
Minneapolis, MN 55406-1575
Phone:
N/A
URL:
N/A
EIN:
262502834
DUNS:
832797158
Number of Employees:
1
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $199,582.00 2
SBIR Phase II $600,000.00 1

Award List:

GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$99,582.00
Agency:
NASA
Principal Investigator:
Jody Klaassen, Principal Investigator
Abstract:
This SBIR proposal addresses the liquid phase epitaxy (LPE) of gallium nitride (GaN) films using nitrogen-enriched metal solutions. Growth of GaN from solutions offers the possibility of drastically reducing the density of line defects. As these defects adversely affect both breakdown voltages and… More

GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions

Award Year / Program / Phase:
2011 / SBIR / Phase II
Award Amount:
$600,000.00
Agency:
NASA
Principal Investigator:
Jody Klaassen, Principal Investigator
Abstract:
The innovations proposed here are Ka-band (38 GHz) group III-nitride power FETs and the dislocation density reducing epitaxial growth methods (LPE) needed for their optimal performance and reliability.Ka-band power transistors with >60% Power Added Efficiency (PAE) are not commercially available.… More

Group III-Nitride LNAs for Microwave Radiometry

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
NASA
Principal Investigator:
Jody Klaassen, Principal Investigator
Abstract:
This phase I proposal addresses the need for microwave and millimeter wave Low Noise Amplifiers (LNAs) for remote sensing applications of the earth's atmosphere. In this work, IIIAN proposes using group III-nitride materials, specifically AlGaN/GaN HEMT structures, to fabricate LNAs for… More