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Company Information:

Company Name:
Spire Semiconductor, LLC
Address:
25 Sagamore Park Road
Hudson, NH 03051-4901
Phone:
N/A
URL:
N/A
EIN:
42457335
DUNS:
124267779
Number of Employees:
200
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $278,572.00 3
STTR Phase I $99,885.00 1

Award List:

Low Cost Multi Junction Solar Cells for Space Applications Incorporating Quantum Wells Sub Cells

Award Year / Program / Phase:
2010 / STTR / Phase I
Award Amount:
$99,885.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Daniel Derkacs, Research Scientist
Research Institution:
University of Texas, Austin
RI Contact:
Edward T. Yu
Abstract:
Spire Semiconductor proposes a novel MOCVD growth scheme that will substantially reduce the production costs of inverted multi-junction solar cells. Incorporating quantum well structures will be investigated as a means to improve device efficiency and end of life cell performance in the space… More

Development and Demonstration of High-Performance InAs/GaSb Superlattice Long Wavelength Infrared Focal Plane Arrays through Improved Sidewall Passiva

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$99,493.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Xuebing Zhang, Scientist
Abstract:
Dark current plays an essential role in the performance of LWIR InAs/GaSb SL-based FPAs. Previous improvements in material quality and device design have significantly suppressed bulk contributions to the dark current. The dark current due to surface defects becomes prominent with decreasing… More

Strained Layer Superlattice Dual Band Mid-Wavelength Infrared/Long Wavelength Infrared (MWIR/LWIR) Focal Plane Arrays

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$79,593.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Xuebing Zhang, Research Scientist
Abstract:
Spire Semiconductor proposes to make InAs/GaSb based MWIR/LWIR dual-band FPA photodetectors with low surface-leakage current using the unique processing and passivation techniques developed at Spire Semiconductor. In phase I, Spire Semiconductor will demonstrate FPA pixel-sized (~30x30um-2)… More

Inverted 3J Tandem Thermophotovoltaic Modules

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$99,486.00
Agency:
NASA
Principal Investigator:
Steven J. Wojtczuk, Principal Investigator
Abstract:
Spire Semiconductor proposes to make an InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell to utilize more of the blackbody spectrum (from a GPHS) efficiently. Semi-insulating InP wafers will be used for monolithically integrated module (MIM)compatibility and to achieve low… More