Improved Design of Active Pixel CMOS Sensors for Charged Particle Detection

The Department of Energy (DOE) nuclear physics program requires advancements in detector instrumentation electronics. Improvements are needed with respect to the energy, position, and timing resolution; sensitivity; speed; low power; and dynamic range. Emerging, monolithic charged-particle and radiation detectors, based on Active Pixel Sensors (APS) and fabricated with standard CMOS (complementary metal-oxide-semiconductor) technology, promise significant advantages over traditional hybrid approaches. However, currently unsolved challenges include the signal-to-noise ratio (SNR) and the slow readout speed. This project will investigate novel APS design concepts. Phase I will: (1) develop high-fidelity, physical three-dimensional (3D) models of APS semiconductor structures, including the new electron-trapping model; (2) validate the 3D models using the existing, APS-radiation-test experimental data; (3) use the validated computational models and tools to verify and optimize the novel APS design; (4) demonstrate, via computer simulation, the superiority of the novel APS design, in terms of readout speed, sensitivity, and SNR; and (5) prepare plans for implementing the novel APS structure into charged-particle detector arrays in Phase II. Commercial Applications And Other Benefits as described by the Applicant: The technology should enable advances in detection systems, instrumentation, and techniques for nuclear physics experiments. The new, improved APS radiation detectors also should find use in electron microscopy; lightweight, portable, inexpensive X-Ray Devices for medical and dental applications; and lightweight, portable, low-cost, wearable (wrist-watch size) radiation detectors for homeland security and defense.