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Electro-Optic laser Steering Device for High Speed Optical Data Processing

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: F33615-01-M-5241
Agency Tracking Number: 01-0364
Amount: $64,979.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 2001
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
2820 East College Avenue
State College, PA 16801
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Wesley Hackenberger
 General Manager
 (814) 238-7485
 wsh@trsceramics.com
Business Contact
 Wesley Hackenberger
Title: General Manager
Phone: (814) 238-7485
Email: wsh@trsceramics.com
Research Institution
N/A
Abstract

This small business innovation research (SBIR) program will address the design and fabrication of a novel optical beam steering device employing relaxor based ferroelectric single crystals. A new family of nonlinear optical materials, namely,Pb(Zn1/3Nb2/3)O3-PbTiO3 single crystals (PZN-PT) which exhibit electro-optic coefficients that are 4-5 times higher than commercial lithium niobate crystals (LiNbO3), will be grown by high temperature flux technique. Electro-optical beam steering deviceconfiguration for continuous high-speed addressing from 1-to-n data channels will be developed using domain microengineering in PZN-PT crystals. The feasibility of PZN-PT crystals for electro-optic applications will serve as the basis, in phase II, ofother electro-optic devices with new relaxor ferroelectrics such as PMN-PT as well as PZN-PT, and new device concepts using horn-shapes and split-horn shaped scanners.Electro-optic devices using relaxor-based ferroelectric crystals will open up newopportunities for high performance electro-optic devices. A new generation of non-linear optical material and device technology will be demonstrated, that clearly represent considerable improvements in the areas of material and device design forhigh-speed data processing.

* Information listed above is at the time of submission. *

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