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Company Information:

Company Name:
CapeSym, Inc.
Address:
6 Huron Drive
Suite 1B
Natick, MA 01760-1325
Phone:
(508) 653-7100
URL:
N/A
EIN:
431837922
DUNS:
807651260
Number of Employees:
6
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $1,906,479.52 18
SBIR Phase II $11,635,599.71 13
STTR Phase I $99,755.00 1
STTR Phase II $749,786.00 1

Award List:

Simulators For Chemical And Physical Vapor Transport Crystal Growth

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$69,981.00
Agency:
NASA
Principal Investigator:
Shariar Motakef , PRINCIPAL INVESTIGATOR
Abstract:
N/a

Simulators For Chemical And Physical Vapor Transport Crystal Growth

Award Year / Program / Phase:
1998 / SBIR / Phase II
Award Amount:
$590,345.00
Agency:
NASA
Principal Investigator:
Shariar Motakef , PRINCIPAL INVESTIGATOR
Abstract:
N/a

Feedback-Controlled Detached Directional Solidification System

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$69,235.00
Agency:
NASA
Principal Investigator:
Abstract:
It is proposed to develop a directional solidification system equipped with a novel sensor to maintain a separation gap between the crucible containing the charge and the solidifying charge. The interaction of crucible wall and the solidifying charge during growth of single crystals of electronics… More

Feedback-Controlled Detached Directional Solidification System

Award Year / Program / Phase:
2002 / SBIR / Phase II
Award Amount:
$595,552.00
Agency:
NASA
Principal Investigator:
Abstract:
It is proposed to develop a directional solidification system equipped with a novel sensor to maintain a separation gap between the crucible containing the charge and the solidifying charge. The interaction of crucible wall and the solidifying charge during growth of single crystals of electronics… More

Feedback-Controlled Detached Directional Solidification System

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$0.00
Agency:
NASA
Principal Investigator:
Abstract:
It is proposed to develop a directional solidification system equipped with a novel sensor to maintain a separation gap between the crucible containing the charge and the solidifying charge. The interaction of crucible wall and the solidifying charge during growth of single crystals of electronics… More

BMDO 014A- Novel System for Bulk Growth of Semi-Insulating SiC

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$69,748.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Shari Motakef, President
Abstract:
"It is proposed to develop a novel growth system capable of producing large diameter and long Semi-Insulating SiC crystals. The proposed system aims to achieve semi-insulating properties in the crystal by reducing the impurity levels in the reactorassociated with the graphite containment elements. … More

BMDO 014A- Novel System for Bulk Growth of Semi-Insulating SiC

Award Year / Program / Phase:
2003 / SBIR / Phase II
Award Amount:
$1,241,584.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Shariar Motakef, President
Abstract:
A novel system for growth of bulk semi-insulating silicon carbide (SI-SiC) is proposed. In this growth system a novel technique is used to reduce the impurity levels in the grown crystal to levels much lower than what is currently available commerciallyor in the laboratories.. The growth system… More

Low Thermal Resistance High Power RF Devices

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,909.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Shariar Motakef, President
Abstract:
The goal of this program is to improve the thermal performance of RF power devices, by reducing their internal thermal resistance. This work will benefit both High Voltage GaAs (HV-GaAs) as well as GaN and SiC RF devices.

High Purity SiC Crystals by the HTCVD Process

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,295.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Shariar Motakef, President
Abstract:
This program focuses on growth of uncompensated semi-insulating SiC crystals by using high purity precursor gases in a novel High Temperature CVD reactor. The crystal growth process is tailored to minimize release of impurities into the growth chamber and incorporation of these impurities into the… More

Low Defect LWIR Substrates by the Detached Growth Method

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,891.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Matthew Overholt, Senior Engineer
Abstract:
This proposal is focused on the development of a novel method for the growth of low-dislocation-density, high-purity, and low-precipitate-concentration CdZnTe and CdSeTe crystals for use as substrates for MCT detectors. This work is motivated by the observation that II-VI compound semiconductors… More

Low Thermal Resistance RF Devices

Award Year / Program / Phase:
2007 / SBIR / Phase II
Award Amount:
$899,937.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Abstract:
The aim of this program is to produce a commercial suite of simulators for design-stage thermal analysis of high power RF devices. The simulators will be easy-to use thermal analysis tools for exploratory as well as detailed analysis of FETs and MMICs. Two complementary FET simulators and one… More

Low Defect LWIR Substrates by Detached Growth Method

Award Year / Program / Phase:
2007 / SBIR / Phase II
Award Amount:
$1,000,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Abstract:
The goal of this program is to extend our Phase I success in growing detached CdZnTe crystals to growth of high quality 51-mm (2-in) diameter crystals as substrates for LWIR sensors. This goal is to be pursued through a strong emphasis on purification of starting materials, experimental… More

Growth of Alloy Semiconductors with Travelling Magnetic Fields

Award Year / Program / Phase:
2007 / STTR / Phase I
Award Amount:
$99,755.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Shariar Motakef, President
Research Institution:
NORTH CAROLINA STATE UNIV.
RI Contact:
Amy G. Herman
Abstract:
A high-fidelity simulator for the growth of alloy compound semiconductors by the Bridgman technique in presence of travelling mangetic fields in proposed. The simulator will capture the physics of solidification of alloy compound semiconductors including thermo-solutal convection, and will fully… More

Reduction of Thermo-Mechanical Stresses Druing Growth of LaBr3

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$99,960.00
Agency:
DOE
Principal Investigator:
Abstract:
LaBr3 detectors show exceptional properties in terms of scintillation light yield, energy resolution, and fast emission. To date, this material is not available in the large sizes needed for a number of detector applications in high energy physics. This project will develop a growth process for this… More

Growth of Alloy Semiconductors with Travelling Magnetic Fields

Award Year / Program / Phase:
2009 / STTR / Phase II
Award Amount:
$749,786.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Shariar Motakef, President
Research Institution:
William Marsh Rice University
RI Contact:
Nancy L. Nisbett
Abstract:
The goal of this program is to build a system for growth of alloy semiconductors with electro-magnetic stirring, and to use this system to grow AlGASb crystals. The growth system will be built to be easily configurable for crystal growth by the Vertical Bridgman,and Traveling Heater methods. It will… More

Growth of Large Area CZT Crystals

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$99,836.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Shariar Motakef, President
Abstract:
This proposal seeks to develop a new process for production of large area CdZnTe substrates for large area focal plane arrays. The proposed system promises to overcome innate scale-up obstacles in the current method for production of CdZnTe crystals.

Reduction of Thermo-Mechanical Stresses Druing Growth of LaBr3

Award Year / Program / Phase:
2009 / SBIR / Phase II
Award Amount:
$750,000.00
Agency:
DOE
Principal Investigator:
Abstract:
Significant improvements in cost and performance of X-ray and ¿ -ray detectors, needed to fulfill DOE responsibilities with respect to nuclear nonproliferation, can be achieved through the availability of high-quality radiation detector materials. This project will develop a novel method for the… More

CZT Substrates for Improved MCT Detector Performance

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$99,877.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Shariar Motakef, President
Abstract:
The work proposed here seeks to produce CZT substrates with superior qualities aimed at improving the performance of MCT detectors used in infrared detectors. The proposed work promises to overcome one of the major causes of dislocation formation in MCT structures.

Growth of Large Area CZT Crystals

Award Year / Program / Phase:
2010 / SBIR / Phase II
Award Amount:
$1,069,775.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Shariar Motakef, President
Abstract:
The goal of this program is to produce large area Cadmium Zinc Telluride (CZT) substrates for growth of Mercury Cadmium Telluride (MCT) films for application in IR Focal Plane Arrays. Two growth processes will be pursued in this program. The grown CZT crystals will be processed into substrates. … More

Electromagnetically-Stirred THM Process for Growth of CZT

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$99,771.00
Agency / Branch:
DOD / DTRA
Principal Investigator:
Shariar Motakef, President
Abstract:
OBJECTIVE: Improve radiation detection material processing for consistently more efficient larger detection materials with shorter overall preparation times. DESCRIPTION: The quality, quantity, size, and cost of radiation detection materials and system are limited by current manufacturing… More

Low-Stress Growth of Cesium Barium Iodide Scintillators

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$149,858.00
Agency:
DHS
Principal Investigator:
Abstract:
The recent discovery of Eu activated alkali-earth halide scintillators promises to revolutionize remote detection and identification of radioisotopes. This proposal addresses the development of methods for production of large-volume, high-quality CsBa2I5scintillators. High-quality, low-cost… More

Low Stress Growth of Barium Bromine Iodide Scintillators

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$149,267.00
Agency:
DHS
Principal Investigator:
Abstract:
The recent discovery of Eu activated alkali-earth halide scintillators promises to revolutionize remote detection and identification of radioisotopes. This proposal addresses the development of methods for production of large-volume, high-quality Barium Bromine Iodide scintillators. High-quality,… More

Novel Method for Growth of Detector-Grade CZT Crystals

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$149,878.00
Agency:
DOE
Principal Investigator:
Shariar Motakef, Dr. – 508-653-7100
Abstract:
CdZnTe remains the material of choice for room temperature semiconductor detection of X- and -ray radiation. The proposed program seeks to develop an alternate method for growth of this material which would achieve superior material properties similar to those obtained by the slower growth method of… More

Fast Wafer-Scale Characterization Techniques for CZT

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$99,974.00
Agency:
DOD
Principal Investigator:
Shariar Motakef, President – (508) 653-7100
Abstract:
The goal of this proposal is to develop fast wafer-scale techniques for characterization of Zn-concentration and precipitates and inclusions of Cd and Te. A novel approach to spectrometry will be used to develop a fully automated system for generation of high resolution 2D map of Zn-concentration… More

CZT Substrates for Improved MCT Detector Performance

Award Year / Program / Phase:
2011 / SBIR / Phase II
Award Amount:
$999,580.00
Agency:
DOD
Principal Investigator:
Shariar Motakef, President – (508) 653-7100
Abstract:
The work proposed here seeks to produce CZT substrates with superior qualities aimed at improving the performance of MCT detectors used in infrared detectors. The proposed work promises to overcome one of the major causes of dislocation formation in MCT structures.

Establishment of Scientific and Industrial Base for Production of High Purity Precursor Materials for SrI2:Eu and CLYC

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$150,000.00
Agency:
DHS
Principal Investigator:
Abstract:
Successful growth of novel halide scintillators SrI2:Eu and CLYC depends on a supply of highly pure precursor materials. CapeSym and SAFC will partner to provide holistic analysis of the nature of precursor impurities and their impact on scintillator performance. We will characterize light and heavy… More

Defect Engineering of TlBr for Room Temperature Radiation Detection

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$150,000.00
Agency:
DHS
Principal Investigator:
Abstract:
TlBr is a promising gamma radiation semiconductor detector material primarily due to its high Z component and high density. TlBr detectors, however, suffer from polarization at room temperature and degrade rapidly under applied bias. Polarization is associated with ionic conductivity in this… More

Low -Stress Growth of BaBrI and CsBa2I5 Scintillators

Award Year / Program / Phase:
2012 / SBIR / Phase II
Award Amount:
$500,000.00
Agency:
DHS
Principal Investigator:
Shariar Motakef – (508) 653-7100
Abstract:
The recent discovery of Eu activated alkali-earth halide scintillators promises to revolutionize remote detection and identification of radioisotopes. This proposal addresses the development of methods for production of large-volume, high-quality CsBa2I5scintillators. High-quality, low-cost… More

Novel Method for Growth of Detector-Grade CZT Crystals

Award Year / Program / Phase:
2012 / SBIR / Phase II
Award Amount:
$998,532.00
Agency:
DOE
Principal Investigator:
Shariar Motakef, Dr. – 508-653-7100
Abstract:
CdZnTe remains the material of choice for room temperature semiconductor detection of X- and -ray radiation, but the availability of high performance material is limited and the cost is very high. The goal of this project is to develop a new technology for production of large volumes of CZT single… More

Fast Wafer-Scale Characterization Techniques for CZT

Award Year / Program / Phase:
2012 / SBIR / Phase II
Award Amount:
$999,973.00
Agency:
DOD
Principal Investigator:
Shariar Motakef, President – (508) 653-7100
Abstract:
This program will develop a turnkey system capable of rapidly producing high-resolution maps of transmittance, energy gap, composition, lattice constant, second-phases and residual strain fields in a variety of substrates critical to Ballistic Missile Defense. The characterization tool developed… More

Establishment of Scientific and Industrial Base for Production of High Purity Precursor Materials for SrI2:Eu and CLYC

Award Year / Program / Phase:
2013 / SBIR / Phase II
Award Amount:
$998,063.14
Agency:
DHS
Principal Investigator:
Stacy Swider – (781) 775-9266
Abstract:
Successful growth of novel halide scintillators SrI2:Eu and CLYC depends on a supply of highly pure precursor materials. CapeSym and SAFC have partnered to develop a thorough understanding of the factors that influence purity, and techniques to reduce these impurity levels in SrI2:Eu and CLYC… More

Defect Engineering of TlBr for Room Temperature Radiation Detection

Award Year / Program / Phase:
2013 / SBIR / Phase II
Award Amount:
$992,258.57
Agency:
DHS
Principal Investigator:
William M. Higgins – (508) 653-7100
Abstract:
TlBr is a promising gamma radiation semiconductor detector material primarily due to its high Z component and high density. TlBr detectors, however, suffer from polarization at room temperature and degrade rapidly under applied bias. Polarization is associated with ionic conductivity in this… More

Low-Cost Radiation Detection Using a Smart Phone

Award Year / Program / Phase:
2014 / SBIR / Phase I
Award Amount:
$149,999.52
Agency:
DHS
Principal Investigator:
Shariar Motakef, President – (508) 653-7100
Abstract:
Accurate high-performance, low-cost handheld devices are needed by law enforcement and first responders for the detection, identification, classification and reporting of radioactive materials. The goal of this program is to produce a compact, low-power radiation identifier that costs less than… More