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Company Information:

Company Name:
BarSiC Semiconductors, LLC
Address:
209 Brook Ave
Starkville, MS 39759 4359
Phone:
(662) 323-9854
URL:
N/A
EIN:
203613966
DUNS:
199474573
Number of Employees:
2
Woman-Owned?:
Yes
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $99,996.00 1
STTR Phase I $99,956.00 1

Award List:

STTR Phase I: Growth of 3C-SiC Substrates using High-Temperature Chemical Vapor Deposition

Award Year / Program / Phase:
2006 / STTR / Phase I
Award Amount:
$99,956.00
Agency:
NSF
Principal Investigator:
Research Institution:
MS State University
RI Contact:
Yaroslav Koshka
Abstract:
This Small Business Technology Transfer (STTR) Phase I project aims at developing new material growth technology for manufacturing semiconductor substrates of cubic 3C-SiC polytype for high-power, high-frequency, high-temperature, and high-radiation hardness military, space, and commercial… More

SBIR Phase I: Ion implantation-free SiC device fabrication technology based on low-temperature selective epitaxial growth

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$99,996.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovative Research Phase I project aims at developing new semiconductor device processing technology for SiC electronics. The new method is based on low-temperature selective epitaxial growth of SiC (LTSEG) of SiC. The technology promises high values of doping, especially for… More