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Company Information:

Name: BarSiC Semiconductors, LLC
Address: 209 Brook Ave
Starkville, MS 39759 4359
Located in HUBZone: No
Woman-Owned: Yes
Minority-Owned: No
Phone: (662) 323-9854

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $99,996.00 1
STTR Phase I $99,956.00 1

Award List:

STTR Phase I: Growth of 3C-SiC Substrates using High-Temperature Chemical Vapor Deposition

Award Year / Program / Phase: 2006 / STTR / Phase I
Agency: NSF
Research Institution: MS State University
Principal Investigator: Galyna Melnychuk, Ms
Award Amount: $99,956.00
RI Contact: Yaroslav Koshka
This Small Business Technology Transfer (STTR) Phase I project aims at developing new material growth technology for manufacturing semiconductor substrates of cubic 3C-SiC polytype for high-power, high-frequency, high-temperature, and high-radiation hardness military, space, and commercial… More

SBIR Phase I: Ion implantation-free SiC device fabrication technology based on low-temperature selective epitaxial growth

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency: NSF
Principal Investigator: Galyna Melnychuk, MS
Award Amount: $99,996.00
This Small Business Innovative Research Phase I project aims at developing new semiconductor device processing technology for SiC electronics. The new method is based on low-temperature selective epitaxial growth of SiC (LTSEG) of SiC. The technology promises high values of doping, especially for… More