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Reliable Direct Bond Copper Ceramic Packages for High Temperature Power Electronics

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX10CE23P
Agency Tracking Number: 094940
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: S5.05
Solicitation Number: N/A
Timeline
Solicitation Year: 2009
Award Year: 2010
Award Start Date (Proposal Award Date): 2010-01-29
Award End Date (Contract End Date): 2010-07-29
Small Business Information
19501 144th Avenue NE, Suite F-500
Woodinville, WA 98072-4423
United States
DUNS: 015577190
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Ender Savrun
 Principal Investigator
 (425) 485-7272
 ender.savrun@siennatech.com
Business Contact
 Karen Valdastri
Title: Business Official
Phone: (425) 485-7272
Email: karen.valdastri@siennatech.com
Research Institution
N/A
Abstract

The proposed program will develop highly reliable, hermetic, Si3N4 ceramic multichip modules to integrate commercially available SiC power devices to build power electronic modules for reliable operation above 500ºC in extreme environments of space exploration. The Phase I program will demonstrate a reliable direct bond copper (DBC) process for Si3N4 substrates, develop high current carrying hermetic feedthroughs, an innovative transient liquid phase (TLP) die attach, and a monometallic wire bonding capable of reliable operation above 500ºC; and fabricate and test a hermetic single-chip module.

* Information listed above is at the time of submission. *

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