SBIR Phase I: High-Speed Atomic Layer Disposition System for Compound Semiconductor Thin Films

This Small Business Innovation Research Phase I project proposes to develop a high-speed and flexible prototype Atomic Layer Deposition (ALD) system suitable for its adaptation to an in-situ precursor generation and a plasma source to develop novel Gallium Nitride (GaN) thin film processes for fabrication of high efficiency and High-Brightness Light Emitting Diodes (HBELDs). Recent performance of HBLEDs shows tremendous promise to replace the incandescent light bulb and thereby reduce the electricity consumption by 50%. To realize this dream, however, HBLED production equipment and process chemistry must be suitably advanced for large scale production. In the proposed phase I effort, Atomic Precision will develop a novel prototype thin film processing system capable of developing a low temperature, high deposition rate and low-cost thin film deposition process, with monolayer precision and low defects. When successfully implemented, this novel deposition system and process technology will have broader applications ion other areas, such as low-cost solar cells, industrial hard coatings, metallization and conformal coatings on intricate components.